Selective ablation of Xe from silicon surfaces: Molecular dynamics simulations and experimental laser patterning

Journal of Physical Chemistry A

Volumn 115, Issue 23, 2011, Pages 6250-6259

  Stein, Ori ^a   Lin, Zhibin ^b   Zhigilei, Leonid V ^c   Asscher, Micha ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b Department of Metallurgical and Materials Engineering   (United States)

^c University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYER ASSISTED LASER PATTERNING; DIFFERENT THICKNESS; EXPERIMENTAL MEASUREMENTS; EXPLOSIVE BOILING; LASER INDUCED; LASER PATTERNING; LATERAL HEAT TRANSFER; MD SIMULATION; MOLECULAR DYNAMICS SIMULATIONS; OVERLAYERS; SELECTIVE HEATING; SI SUBSTRATES; SILICON SUBSTRATES; SILICON SURFACES; SUBSTRATE TEMPERATURE; THRESHOLD LASERS; UNIFORM HEATING;

ABLATION; HEATING; PHASE TRANSITIONS; SUBSTRATES;

MOLECULAR DYNAMICS;

SILICON; XENON;

ARTICLE; CHEMISTRY; LASER; MOLECULAR DYNAMICS; SURFACE PROPERTY;

LASERS; MOLECULAR DYNAMICS SIMULATION; SILICON; SURFACE PROPERTIES; XENON;

EID: 79959941078     PISSN: 10895639     EISSN: 15205215     Source Type: Journal    
DOI: 10.1021/jp111658w     Document Type: Article

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