Kinetic Monte Carlo model of defect transport and irradiation effects in La-doped CeO2

Journal of Nuclear Materials

Volumn 414, Issue 2, 2011, Pages 145-149

  Oaks, Aaron ^a   Yun, Di ^b   Ye, Bei ^a   Chen, Wei Ying ^a   Stubbins, James F ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT CONCENTRATIONS; DOPED CEO; EXPERIMENTAL DATA; INTERATOMIC POTENTIAL; IRRADIATION EFFECT; KINETIC MONTE CARLO; KINETIC MONTE CARLO MODEL; KINETIC MONTE CARLO SIMULATION; MIGRATION ENERGY; MOLECULAR STATICS; OXYGEN MOBILITY; OXYGEN VACANCY MIGRATION; SURROGATE MATERIALS; TRAPPING EFFECTS; VACANCY DIFFUSION;

COMPUTER SIMULATION; DOPING (ADDITIVES); KINETICS; LANTHANUM; LANTHANUM ALLOYS; MOLECULAR OXYGEN; MONTE CARLO METHODS; NUCLEAR FUELS;

OXYGEN VACANCIES;

EID: 79959935590     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnucmat.2011.02.030     Document Type: Conference Paper

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