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Volumn , Issue , 2011, Pages

1.3-μm, 50-Gbit/s EADFB lasers for 400GbE

Author keywords

[No Author keywords available]

Indexed keywords

WAVELENGTH RANGES;

EID: 79959935304     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (10)

References (8)
  • 1
    • 79959930428 scopus 로고    scopus 로고
    • http://www.ieee802.org/3/ba
  • 2
    • 68449093717 scopus 로고    scopus 로고
    • Operation of a 25-gb/s direct modulation ridge waveguide MQW-DFB laser up to 85°C
    • T. Tadokoro et al., "Operation of a 25-Gb/s direct modulation ridge waveguide MQW-DFB laser up to 85°C," IEEE PTL, 21, 1154-1156 (2009).
    • (2009) IEEE PTL , vol.21 , pp. 1154-1156
    • Tadokoro, T.1
  • 3
    • 77955858369 scopus 로고    scopus 로고
    • 25-gbit/s 1.3-μm InGaAlAs-based electroabsorption modulator integrated with a DFB laser for metro-area (40 km) 100-gbit/s ethernet system
    • T. Fujisawa et al., "25-Gbit/s 1.3-μm InGaAlAs-based electroabsorption modulator integrated with a DFB laser for metro-area (40 km) 100-Gbit/s Ethernet system," Electron. Lett., 45, 900-901 (2009).
    • (2009) Electron. Lett. , vol.45 , pp. 900-901
    • Fujisawa, T.1
  • 4
    • 78650596435 scopus 로고    scopus 로고
    • 4×25-gbit/s, 1.3-μm, monolithically integrated light source for 100Gbit/s ethernet
    • Th.9.D.1
    • T. Fujisawa et al., "4×25-Gbit/s, 1.3-μm, monolithically integrated light source for 100Gbit/s Ethernet," in ECOC2010, Th.9.D.1, (2010).
    • (2010) ECOC2010
    • Fujisawa, T.1
  • 5
    • 77950399013 scopus 로고    scopus 로고
    • High-speed EA-DFB laser for 40-G and 100-gbps
    • S. Makino et al., "High-speed EA-DFB laser for 40-G and 100-Gbps," IEICE Trans. Electron., E92-C, 937-941 (2009).
    • (2009) IEICE Trans. Electron. , vol.E92-C , pp. 937-941
    • Makino, S.1
  • 6
    • 71949102603 scopus 로고    scopus 로고
    • Clear eye opening 1.3μm-25 / 43Gbps EML with novel tensile-strained asymmetric QW absorption layer
    • 8.1.3
    • T. Saito et al., "Clear eye opening 1.3μm-25 / 43Gbps EML with novel tensile-strained asymmetric QW absorption layer," in ECOC2009, 8.1.3 (2009).
    • (2009) ECOC2009
    • Saito, T.1
  • 7
    • 77953941745 scopus 로고    scopus 로고
    • 1.3 μm EML TOSA for serial 40 gbps ethernet solution
    • OthC2
    • T. Uesugi et al., "1.3 μm EML TOSA for serial 40 Gbps Ethernet solution," in OFC2010, OthC2 (2010).
    • (2010) OFC2010
    • Uesugi, T.1
  • 8
    • 0035356466 scopus 로고    scopus 로고
    • Band parameters for III-V compound semiconductors and their alloys
    • 11 I, DOI 10.1063/1.1368156
    • I. Vurgaftman et al., "Band parameters for III-V compound semiconductors and their alloys," J. Appl. Phys., 89, 5815- (2001). (Pubitemid 32886908)
    • (2001) Journal of Applied Physics , vol.89 , pp. 5815
    • Vurgaftman, I.1    Meyer, J.R.2    Ram-Mohan, L.R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.