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Volumn E92-C, Issue 7, 2009, Pages 937-941

High-speed EA-DFB laser for 40-G and 100-Gbps

Author keywords

100 Gbps; 40 Gbps; DFB laser; EA; Electro absorption modulator; Ethernet; In gaalas; Uncooled

Indexed keywords

ELECTROABSORPTION MODULATORS; ETHERNET; HIGH SPEED NETWORKS; LIGHT EXTINCTION; MODULATION;

EID: 77950399013     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1587/transele.E92.C.937     Document Type: Article
Times cited : (14)

References (16)
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  • 3
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  • 4
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    • High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier inlaser-integrated modules
    • Jan
    • N. C. Frateschi, J. Zhang, W. J. Choi, H. Gebretsadik, R. Jambunathan, and A. E. Bond, "High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier inlaser-integrated modules, " Electron. Lett., vol. 40, no. 2, pp. 140-141, Jan. 2004.
    • (2004) Electron. Lett. , vol.40 , Issue.2 , pp. 140-141
    • Frateschi, N.C.1    Zhang, J.2    Choi, W.J.3    Gebretsadik, H.4    Jambunathan, R.5    Bond, A.E.6
  • 5
    • 33751006831 scopus 로고    scopus 로고
    • 10-Gb/s 23-km penalty-free operation of 1310-nm uncooled EML with semi-insulating BH structure
    • DOI 10.1109/LPT.2005.860042
    • K. Yashiki, K. Kato, H. Chida, K. Tsuruoka, R. Kobayashi, S. Sudo, K. Sato, and K. Kudo, "10-Gb/s 23-km penalty-free operation of 1310-nm uncooled EML with semi-insulating BH structure, " IEEE Photonics Technol. Lett., vol. 18, no. 1, pp. 109-111, Jan. 2006. (Pubitemid 46542508)
    • (2006) IEEE Photonics Technology Letters , vol.18 , Issue.1 , pp. 109-111
    • Yashiki, K.1    Kato, T.2    Chida, H.3    Tsuruoka, K.4    Kobayashi, R.5    Sudo, S.6    Sato, K.7    Kudo, K.8
  • 6
    • 12844259523 scopus 로고    scopus 로고
    • Wide temperature range, from 0 to 85°C, operation of a 1.55 μm, 40 Gbit/s InGaAlAs electro-absorption optical modulator
    • H. Arimoto, J. Shimizu, M. Shirai, and M. Aoki, "Wide temperature range, from 0 to 85°C, operation of a 1.55 μm, 40 Gbit/s InGaAlAs electro-absorption optical modulator, " Electron. Lett., vol. 41, no. 1, pp. 35-37, 2005.
    • (2005) Electron. Lett. , vol.41 , Issue.1 , pp. 35-37
    • Arimoto, H.1    Shimizu, J.2    Shirai, M.3    Aoki, M.4
  • 14
    • 0037130414 scopus 로고    scopus 로고
    • Advantages of optical modulators with In- GaAlAs/InGaAlAs MQW structure
    • July
    • J. Shimizu, M. Aoki, T. Tsuchiya, M. Shirai, A. Taike, T. Ohtoshi, and S. Tsuji, "Advantages of optical modulators with In- GaAlAs/InGaAlAs MQW structure, " Electron. Lett., vol. 38, no. 15, pp. 821-822, July 2002.
    • (2002) Electron. Lett. , vol.38 , Issue.15 , pp. 821-822
    • Shimizu, J.1    Aoki, M.2    Tsuchiya, T.3    Shirai, M.4    Taike, A.5    Ohtoshi, T.6    Tsuji, S.7
  • 16
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    • Evaluation of the opticalcoupling efficiency of InGaAlAs-InGaAsP butt joint using a novel multiple butt-jointed laser
    • June
    • T. Kitatani, K. Shinoda, T. Tsuchiya, H. Sato, K. Ouchi, H. Uchiyama, S. Tsuji, and M. Aoki, "Evaluation of the opticalcoupling efficiency of InGaAlAs-InGaAsP butt joint using a novel multiple butt-jointed laser, " IEEE Photonics Technol. Lett., vol. 17, no. 6, pp. 1148-1150, June 2005.
    • (2005) IEEE Photonics Technol. Lett. , vol.17 , Issue.6 , pp. 1148-1150
    • Kitatani, T.1    Shinoda, K.2    Tsuchiya, T.3    Sato, H.4    Ouchi, K.5    Uchiyama, H.6    Tsuji, S.7    Aoki, M.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.