Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing

Optics Express

Volumn 19, Issue 14, 2011, Pages 13692-13699

  Jain, Siddharth R ^a   Sysak, Matthew N ^b   Kurczveil, Geza ^a   Bowers, John E ^a  

^a University of California   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; ENERGY GAP; INTEGRATION; ION IMPLANTATION; SEMICONDUCTOR QUANTUM WELLS;

AS-GROWN; BAND GAPS; BLUE SHIFT; BLUE-SHIFTED; BROADBAND LASERS; DFB LASER; GAIN BANDWIDTH; HYBRID SILICON; MULTI-CHANNEL; QUANTUM WELL INTERMIXING; SINGLE CHIPS;

QUANTUM WELL LASERS;

SILICON;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; EQUIPMENT; EQUIPMENT DESIGN; LASER;

COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LASERS; SILICON;

EID: 79959888183     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.013692     Document Type: Article

References (9)

1. H. Park, A. W. Fang, D. Liang, Y.-H. Kuo, H.-H. Chang, B. R. Koch, H.-W. Chen, M. N. Sysak, R. Jones, and J. E. Bowers, "Photonic integration on the hybrid silicon evanescent device platform," Adv. Opt. Technol. 2008, 682978 (2008).
2. H. H. Chang, Y. H. Kuo, R. Jones, A. Barkai, and J. E. Bowers, "Integrated hybrid silicon triplexer," Opt. Express 18(23), 23891-23899 (2010).
3. M. N. Sysak, J. O. Anthes, J. E. Bowers, O. Raday, and R. Jones, "Integration of hybrid silicon lasers and electroabsorption modulators," Opt. Express 16(17), 12478-12486 (2008).
4. E. Skogen, J. Raring, G. Morrison, C. Wang, V. Lal, M. Masanovic, and L. Coldren, "Monolithically integrted active components: A quantum-well intermixing approach," IEEE J. Sel. Top. Quantum Electron. 11(2), 343-355 (2005). (Pubitemid 40682986)
5. G. Lin and C. Lee, "Comparison of 1300 nm quantum well lasers using different material systems," Opt. Quantum Electron. 34(12), 1191-1200 (2002).
6. D. Liang and J. Bowers, "Highly efficient vertical out gassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator (SOI) substrate," J. Vac. Sci. Technol. B 26(4), 1560-1568 (2008).
7. J. W. Raring, "Advanced InP based monolithic integration using quantum well intermixing and MOCVD regrowth," Ph. D dissertation, Department of Electrical and Computer Engineering, University of California, Santa Barbara. June 2006.
8. Y. H. Kuo, H. W. Chen, and J. E. Bowers, "High speed hybrid silicon evanescent electroabsorption modulator," Opt. Express 16(13), 9936-9941 (2008).
9. Y. Tang, H. Chen, S. Jain, J. Peters, U. Westergren, and J. Bowers, "50 Gb/s hybrid silicon travelling-wave electroabsorption modulator," Opt. Express (to be published).