Electronic confinement effects and optical properties of multilayer slabs of silicon: Numerical model studies

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7396, Issue , 2009, Pages

  Obara, Christopher J ^a,b   Kilin, Dmitri S ^a   Micha, David A ^a  

^a UNIVERSITY OF FLORIDA   (United States)

^b NATIONAL INSTITUTE OF ALLERGY AND INFECTIOUS DISEASES   (United States)

Author keywords

confinement; excited states; lattice pseudopotentials; photoexcitations; photovoltaics; silicon; Thin film

Indexed keywords

AB INITIO CALCULATIONS; ABSORPTION COEFFICIENTS; ATOMIC RADIUS; CONFINEMENT EFFECTS; DENSITY OF STATE; ELECTRON BINDING ENERGY; ELECTRONIC BAND GAPS; ELECTRONIC CONFINEMENT; ELECTRONIC ENERGY LEVELS; ELECTRONIC ORBITALS; EXPERIMENTAL CURVES; LIGHT FREQUENCY; NUMBER OF LAYERS; NUMERICAL MODELS; ORBITALS; PARAMETERIZED; PERIODIC POTENTIALS; PHOTO-EXCITATIONS; PHOTON ENERGY; PHOTOVOLTAICS; PSEUDOPOTENTIALS; SELECTION RULES; SI (1 1 1); STEPWISE INCREASE; TRANSITION DIPOLE; VISIBLE LIGHT;

ABSORPTION; BINDING ENERGY; CALCULATIONS; FILM PREPARATION; NANOSTRUCTURED MATERIALS; OPTICAL MULTILAYERS; PHOTOEXCITATION; SEMICONDUCTING SILICON COMPOUNDS; SURFACE CHEMISTRY; SURFACE PROPERTIES;

OPTICAL PROPERTIES;

EID: 79959713550     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.828179     Document Type: Conference Paper

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