Optical absorption evidence of quantum confinement in Si/CaF 2 multilayers grown by molecular beam epitaxy

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 670-676

  Bassani, F ^a   Mihalcescu, I ^b   Vial, J C ^b   Arnaud D'Avitaya, F ^a  

^a CNRS   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

Absorption; Band structure; Low dimensional structures; Luminescence; MBE growth; Multilayers; Silicon

Indexed keywords

BAND STRUCTURE; CALCIUM COMPOUNDS; DEPOSITION; GRAIN SIZE AND SHAPE; LIGHT ABSORPTION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

QUANTUM CONFINEMENT; X RAY ABSORPTION FINE STRUCTURE MEASUREMENTS;

MULTILAYERS;

EID: 0031548443     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80162-6     Document Type: Article

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