Growth, optical and electrical properties of Ca2Si film grown on Si(111) and Mg2Si/Si(111) substrates

Physics Procedia

Volumn 11, Issue , 2011, Pages 95-98

  Dotsenko, S A ^a   Fomin, D V ^b   Galkin, K N ^a   Goroshko, D L ^a   Galkin, N G ^a  

^a INSTITUTE OF AUTOMATION AND CONTROL PROCESSES   (Russian Federation)

^b AMUR STATE UNIVERSITY   (Russian Federation)

Author keywords

Calcium; Calcium silicide; Magnesium silicide; Semiconductor film; Silicon

Indexed keywords

CALCIUM; ENERGY GAP; OPTOELECTRONIC DEVICES; SEMICONDUCTING SILICON; SILICIDES; SILICON;

HIGH QUALITY; MAGNESIUM SILICIDES; NARROW TEMPERATURE RANGES; OPTICAL AND ELECTRICAL PROPERTIES; SEMICONDUCTOR FILMS; SI (1 1 1); SURFACE PHASE; SURFACE PHASIS;

FILM GROWTH;

EID: 79959438842     PISSN: 18753884     EISSN: 18753892     Source Type: Conference Proceeding    
DOI: 10.1016/j.phpro.2011.01.015     Document Type: Conference Paper

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4. S.A. Dotsenko et al., e-J. Surf. Sci. Nanotech. 7 (2009) 186.
5. S.A. Dotsenko et al., e-J. Surf. Sci. Nanotech. 7 (2009) 816.