High-temperature transport properties of Ca0.98 RE 0.02 MnO3-δ (RE=Sm, Gd, and Dy)

Applied Physics Letters

Volumn 98, Issue 21, 2011, Pages

  Liu, Chia Jyi ^a   Bhaskar, Ankam ^a   Yuan, J J ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGENERATE SEMICONDUCTORS; ELECTRICAL RESISTIVITY; ELECTRON-DOPING; HIGH-TEMPERATURE TRANSPORT PROPERTIES; IMPURITY BANDS; OXYGEN DEFECT; PARTIAL SUBSTITUTION; TEMPERATURE DEPENDENCE; TWO-BAND MODEL;

DEFECTS; ELECTRIC CONDUCTIVITY; GADOLINIUM; MANGANESE; MANGANESE OXIDE; OXYGEN; SEMICONDUCTOR DOPING; SOLID STATE REACTIONS; TEMPERATURE DISTRIBUTION; THERMOELECTRIC POWER; TRANSPORT PROPERTIES;

CALCIUM;

EID: 79959401988     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3593962     Document Type: Article

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