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Applied Physics A: Materials Science and Processing

Volumn 102, Issue 3, 2011, Pages 681-687

Investigation of carrier injection mechanism in small molecular organic light emitting device with a mixed single organic layer

(3) Wang, Zhaokui a Naka, Shigeki a Okada, Hiroyuki a

a UNIVERSITY OF TOYAMA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL ALLOYS; BARRIER HEIGHTS; BIPYRIDYL; CARRIER INJECTION MECHANISM; DOPANT MATERIALS; ELECTRON BARRIER; ELECTRON TRANSPORT MATERIALS; ELECTRONS AND HOLES; INTERFACIAL CONDITIONS; INTERFACIAL STATE; ORGANIC LAYERS; ORGANIC LIGHT-EMITTING DEVICES; RUBRENES; SCHOTTKY; SINGLE LAYER; SMALL MOLECULES; TEMPERATURE DEPENDENCE OF CURRENT;

ALUMINUM ALLOYS; ELECTRODES; LIGHT EMISSION; THERMIONIC EMISSION;

ELECTRONS;

EID: 79959343391 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-6084-3 Document Type: Article

Times cited : (3)

References (20)

1
- 21544459113
- C.W. Tang, S.A. VanSlyke, Appl. Phys. Lett. 51, 913 (1987).
- (1987) Appl. Phys. Lett. , vol.51 , pp. 913
- Tang, C.W.¹ VanSlyke, S.A.²

2
- 3543099288
- C.W. Tang, S.A. VanSlyke, C.H. Chen, J. Appl. Phys. 65, 3610 (1989).
- (1989) J. Appl. Phys. , vol.65 , pp. 3610
- Tang, C.W.¹ VanSlyke, S.A.² Chen, C.H.³

3
- 0000862444
- D. Ma, I.A. Hümmelgen, X. Jing, Z. Hong, L. Wang, X. Zhao, F. Wang, F. Karasz, J. Appl. Phys. 87, 312 (2000).
- (2000) J. Appl. Phys. , vol.87 , pp. 312
- Ma, D.¹ Hümmelgen, I.A.² Jing, X.³ Hong, Z.⁴ Wang, L.⁵ Zhao, X.⁶ Wang, F.⁷ Karasz, F.⁸

4
- 0034196601
- D. Ma, I.A. Hümmelgen, X. Jing, D.Wang, Z. Hong, L. Wang, X. Zhao, F. Wang, Braz. J. Phys. 30, 392 (2000).
- (2000) Braz. J. Phys. , vol.30 , pp. 392
- Ma, D.¹ Hümmelgen, I.A.² Jing, X.³ Wang, D.⁴ Hong, Z.⁵ Wang, L.⁶ Zhao, X.⁷ Wang, F.⁸

5
- 0027678070
- N.C. Greenham, S.C. Moratti, D.D.C. Bradley, R.H. Friend, A.B. Holmes, Nature (Lond.) 365, 628 (1993).
- (1993) Nature (Lond.) , vol.365 , pp. 628
- Greenham, N.C.¹ Moratti, S.C.² Bradley, D.D.C.³ Friend, R.H.⁴ Holmes, A.B.⁵

6
- 0000917514
- S. Naka, K. Shinno, H. Okada, H. Onnagawa, K. Miyashita, Jpn. J. Appl. Phys. 33, L1772 (1994).
- (1994) Jpn. J. Appl. Phys. , vol.33
- Naka, S.¹ Shinno, K.² Okada, H.³ Onnagawa, H.⁴ Miyashita, K.⁵

7
- 0001179710
- M.C.J.M. Vissengerg, M.J.M. Jong, Phys. Rev. B 57, 2667 (1998).
- (1998) Phys. Rev. B , vol.57 , pp. 2667
- Vissengerg, M.C.J.M.¹ Jong, M.J.M.²

8
- 0033521979
- Y. Cao, I.D. Parker, C. Zhang, A.J. Heeger, Nature (Lond.) 397, 414 (1999).
- (1999) Nature (Lond.) , vol.397 , pp. 414
- Cao, Y.¹ Parker, I.D.² Zhang, C.³ Heeger, A.J.⁴

9
- 0003016904
- Y.D. Jing, J.P. Yang, P.L. Heremans, M. Van de Auweraer, E. Rousseau, N.J. Geise, G. Borghs, Chem. Phys. Lett. 320, 387 (2000).
- (2000) Chem. Phys. Lett. , vol.320 , pp. 387
- Jing, Y.D.¹ Yang, J.P.² Heremans, P.L.³ Auweraer, M.V.D.⁴ Rousseau, E.⁵ Geise, N.J.⁶ Borghs, G.⁷

10
- 0035981027
- M. Matsumura, K. Manabe, Appl. Phys. Lett. 79, 4491 (2001).
- (2001) Appl. Phys. Lett. , vol.79 , pp. 4491
- Matsumura, M.¹ Manabe, K.²

11
- 79958195234
- A.B. Chwang, R.C. Kwong, J.J. Brown, Appl. Phys. Lett. 80, 725 (2002).
- (2002) Appl. Phys. Lett. , vol.80 , pp. 725
- Chwang, A.B.¹ Kwong, R.C.² Brown, J.J.³

12
- 77950856332
- Z.K. Wang, S. Naka, H. Okada, Jpn. J. Appl. Phys. 49, 01AA02 (2010).
- (2010) Jpn. J. Appl. Phys. , vol.49
- Wang, Z.K.¹ Naka, S.² Okada, H.³

13
- 77951474916
- Z.K. Wang, S. Naka, H. Okada, Mol. Cryst. Liq. Cryst. 519, 1 (2010).
- (2010) Mol. Cryst. Liq. Cryst. , vol.519 , pp. 1
- Wang, Z.K.¹ Naka, S.² Okada, H.³

14
- 0004005306
- 2nd edn. (Wiley, New York), Chap. 7
- S.M. Sze, Physics of Semiconductor Devices, 2nd edn. (Wiley, New York, 1981), Chap. 7.
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

15
- 0031356342
- S. Naka, M. Tamekawa, T. Terashita, H. Okada, H. Anada, H. Onnagawa, Synth. Met. 91, 129 (1997).
- (1997) Synth. Met. , vol.91 , pp. 129
- Naka, S.¹ Tamekawa, M.² Terashita, T.³ Okada, H.⁴ Anada, H.⁵ Onnagawa, H.⁶

16
- 21544456952
- P.W.M. Blom, M.J.M. de Jong, J.J.M. Vleggaar, Appl. Phys. Lett. 68, 3308 (1996).
- (1996) Appl. Phys. Lett. , vol.68 , pp. 3308
- Blom, P.W.M.¹ De Jong, M.J.M.² Vleggaar, J.J.M.³

17
- 0000691374
- P. Dannetun, M. Löglund, C. Fredriksson, R. Lazzaroni, C. Fauquet, S. Stafström, C.W. Spangler, J.L. Brédas, W.R. Salaneck, J. Chem. Phys. 100, 6765 (1994).
- (1994) J. Chem. Phys. , vol.100 , pp. 6765
- Dannetun, P.¹ Löglund, M.² Fredriksson, C.³ Lazzaroni, R.⁴ Fauquet, C.⁵ Stafström, S.⁶ Spangler, C.W.⁷ Brédas, J.L.⁸ Salaneck, W.R.⁹

18
- 0028543222
- P. Dannetun, M. Fahlman, C. Fauquet, K. Kaerijama, Y. Sonoda, R. Lazzaroni, J.L. Brédas, W.R. Salaneck, Synth. Met. 67, 133 (1994).
- (1994) Synth. Met. , vol.67 , pp. 133
- Dannetun, P.¹ Fahlman, M.² Fauquet, C.³ Kaerijama, K.⁴ Sonoda, Y.⁵ Lazzaroni, R.⁶ Brédas, J.L.⁷ Salaneck, W.R.⁸

19
- 0029732045
- M. Matsumura, T. Akai, M. Saito, T. Kimura, J. Appl. Phys. 79, 264 (1996).
- (1996) J. Appl. Phys. , vol.79 , pp. 264
- Matsumura, M.¹ Akai, T.² Saito, M.³ Kimura, T.⁴

20
- 0004005306
- 2nd edn. (Wiley, New York), Chap. 5
- S.M. Sze, Physics of Semiconductor Devices, 2nd edn. (Wiley, New York, 1981), Chap. 5.
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

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