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Volumn 98, Issue 22, 2011, Pages

Thermal conductivity as a metric for the crystalline quality of SrTiO 3 epitaxial layers

(13) Oh, Dong Wook a Ravichandran, Jayakanth b Liang, Chen Wei c Siemons, Wolter b Jalan, Bharat d Brooks, Charles M e Huijben, Mark f Schlom, Darrell G e Stemmer, Susanne d Martin, Lane W c Majumdar, Arun g Ramesh, Ramamoorthy h Cahill, David G c

a Korea Institute of Machine and Materials (South Korea)

b UNIVERSITY OF CALIFORNIA (United States)

c University of Illinois at Urbana Champaign (United States)

d Santa Barbara (United States)

e School of Chemical and Molecular Engineering (United States)

f UNIVERSITY OF TWENTE (Netherlands)

g Currently with Benson Hill (United States)

h No 1760 (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SINGLE CRYSTALS; CRYSTALLINE QUALITY; GROWTH CONDITIONS; GROWTH TECHNIQUES; HOMOEPITAXIAL LAYERS; SRTIO; TARGET MATERIALS; TEMPERATURE RANGE; TIME DOMAIN THERMOREFLECTANCE;

CRYSTALLINE MATERIALS; DIFFRACTIVE OPTICS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; POINT DEFECTS; PULSED LASER DEPOSITION; SINGLE CRYSTALS; STRONTIUM ALLOYS; STRONTIUM TITANATES; SURFACE DEFECTS; TIME DOMAIN ANALYSIS;

THERMAL CONDUCTIVITY;

EID: 79958853041 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3579993 Document Type: Article

Times cited : (71)

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