Influence of preparation condition and doping concentration of Fe-doped ZnO thin films: Oxygen-vacancy related room temperature ferromagnetism

Thin Solid Films

Volumn 519, Issue 19, 2011, Pages 6624-6628

  Zhang, Wei Guang ^a   Lu, Bin ^a   Zhang, Li Qiang ^a   Lu, Jian Guo ^a   Fang, Min ^a   Wu, Ke Wei ^a   Zhao, Bing Hui ^a   Ye, Zhi Zhen ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Diluted magnetic semiconductors; Fe Ga co doping; Miscocropy; Oxygen vacancies; Zinc oxide

Indexed keywords

BOUND MAGNETIC POLARONS; CO-DOPED ZNO; DILUTED MAGNETIC SEMICONDUCTORS; DOPING CONCENTRATION; FE-DOPED; FE-GA CO-DOPING; GA DOPING; MISCOCROPY; PREPARATION CONDITIONS; QUARTZ SUBSTRATE; RAPID ANNEALING; ROOM TEMPERATURE FERROMAGNETISM; ZNO THIN FILM;

CARRIER CONCENTRATION; FERROMAGNETISM; FILM PREPARATION; GALLIUM ALLOYS; MAGNETIC SEMICONDUCTORS; OXIDE FILMS; OXYGEN; POLARONS; QUARTZ; SEMICONDUCTOR DOPING; THIN FILMS; ZINC OXIDE;

OXYGEN VACANCIES;

EID: 79958231346     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.233     Document Type: Article

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