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Volumn 323, Issue 1, 2011, Pages 330-333

Insertion of CdSe quantum dots in ZnSe nanowires: MBE growth and microstructure analysis

(10) Den Hertog, M a Elouneg Jamroz, M a Bellet Amalric, E b Bounouar, S a Bougerol, C a Andre R a Genuist, Y a Poizat, J P a Kheng, K b Tatarenko, S a

a CNRS (France)

b CEA GRENOBLE (France)

Author keywords

Molecular beam epitaxy; Nanowires; Photoluminescence; Quantum dots; Semiconducting IIVI material; Transmission electron microscopy

Indexed keywords

CDSE QUANTUM DOTS; ENERGY FILTERED TEM; GAAS SUBSTRATES; HIGH-ANGLE ANNULAR DARK FIELDS; MBE GROWTH; MICROSTRUCTURE ANALYSIS; QUANTUM DOTS; SCANNING TEM; SEMICONDUCTING II-VI MATERIALS; ZNSE NANOWIRES;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

OPTICAL WAVEGUIDES;

EID: 79957975597 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.11.159 Document Type: Article

Times cited : (5)

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