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Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 529-533

MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

(6) Cao, Yu a Wang, Kejia a Li, Guowang a Kosel, Tom a Xing, Huili a Jena, Debdeep a

a University of Notre Dame (United States)

Author keywords

2DEG; AlN; Heterojunction; MBE; TEM; XRD

Indexed keywords

2DEG; ALN; MBE; TEM; XRD;

CARRIER CONCENTRATION; DENSITY FUNCTIONAL THEORY; ELECTRIC RESISTANCE; ELECTRON DENSITY MEASUREMENT; ELECTRON GAS; ELECTRONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES;

HETEROJUNCTIONS;

EID: 79957971691 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.12.047 Document Type: Article

Times cited : (50)

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