Temperature induced band gap shrinkage in Cu2GeSe3: Role of electronphonon interaction

Physica B: Condensed Matter

Volumn 406, Issue 14, 2011, Pages 2847-2850

  Sarkar, Bimal Kumar ^a   Verma, Ajay Singh ^b   Deviprasad, P S ^c  

^a VIT UNIVERSITY   (India)

^b PANJAB UNIVERSITY   (India)

^c Akkshaya College of Engineering Technology   (India)

Author keywords

Cu2GeSe3; Electronphonon interaction; Optical absorption; Photoacoustic spectroscopy; Ternary semiconductor

Indexed keywords

ACOUSTIC PHONONS; BAND GAP ENERGY; BAND GAPS; CHARACTERISTIC TEMPERATURE; CU2GESE3; DATA FITTINGS; ELECTRON PHONON; EMPIRICAL RELATIONS; MEAN FREQUENCY; OPTICAL ABSORPTION; OPTICAL ABSORPTION SPECTRUM; SEMICONDUCTING COMPOUNDS; TEMPERATURE-INDUCED; TERNARY SEMICONDUCTOR; THERMAL VARIATION;

ABSORPTION; DEBYE TEMPERATURE; LIGHT ABSORPTION; OPTICAL MATERIALS; OPTICAL PROPERTIES; PHOTOACOUSTIC EFFECT; PHOTOACOUSTIC SPECTROSCOPY; SHRINKAGE;

ENERGY GAP;

EID: 79957739908     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2011.04.045     Document Type: Article

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