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CIRP Annals - Manufacturing Technology

Volumn 60, Issue 1, 2011, Pages 567-570

Chemical mechanical polishing of patterned copper wafer surface using water-soluble fullerenol slurry

(5) Takaya, Y a Kishida, H a Hayashi, T a Michihata, M a Kokubo, K a

a OSAKA UNIVERSITY (Japan)

Author keywords

Fulleren; Polishing; Surface

Indexed keywords

BRITTLE LAYERS; CHEMICAL EFFECT; COPPER WAFER; FABRICATION PROCESS; FULLEREN; FULLERENOLS; HIGH-PERFORMANCE SEMICONDUCTORS; MATERIAL REMOVAL RATE; POLISHING AGENTS; POLISHING PADS; SEM OBSERVATION; XPS ANALYSIS;

CHEMICAL ANALYSIS; COPPER COMPOUNDS; POLISHING; SEMICONDUCTOR DEVICES; SILICON WAFERS; STRIPPING (REMOVAL);

CHEMICAL MECHANICAL POLISHING;

EID: 79957631517 PISSN: 00078506 EISSN: 17260604 Source Type: Journal
DOI: 10.1016/j.cirp.2011.03.068 Document Type: Article

Times cited : (19)

References (8)

1
- 0345829159
- Material Removal Mechanisms in Lapping and Polishing
- C.J. Evans, E. Paul, D. Dornfeld, D.A. Lucca, G. Byrne, M. Tricard, F. Klocke, O. Dambon, and B.A. Mullany Material Removal Mechanisms in Lapping and Polishing Annals of the CIRP 52 2 2003 611 634
- (2003) Annals of the CIRP , vol.52 , Issue.2 , pp. 611-634
- Evans, C.J.¹ Paul, E.² Dornfeld, D.³ Lucca, D.A.⁴ Byrne, G.⁵ Tricard, M.⁶ Klocke, F.⁷ Dambon, O.⁸ Mullany, B.A.⁹

2
- 18344392085
- A Model of Copper CMP
- E. Paul, F. Kaufman, V. Brusic, J. Zhang, F. Sun, and R Vacassy A Model of Copper CMP Journal of the Electrochemical Society 152 4 2005 G322 G328
- (2005) Journal of the Electrochemical Society , vol.152 , Issue.4
- Paul, E.¹ Kaufman, F.² Brusic, V.³ Zhang, J.⁴ Sun, F.⁵ Vacassy, R.⁶

3
- 33947578926
- Colloidal Nano-Abrasives and Slurry for Chemical-Mechanical Polishing of Semiconductor Materials
- K. Zhang, Z. Song, C. Lin, S. Feng, and B Chen Colloidal Nano-Abrasives and Slurry for Chemical-Mechanical Polishing of Semiconductor Materials Journal of Ceramic Processing Research 8 1 2007 52 55
- (2007) Journal of Ceramic Processing Research , vol.8 , Issue.1 , pp. 52-55
- Zhang, K.¹ Song, Z.² Lin, C.³ Feng, S.⁴ Chen, B.⁵

4
- 33750068316
- Surface evolution during the chemical mechanical planarization of copper
- W. Che, A. Bastawros, and A Chandra Surface Evolution during the Chemical Mechanical Planarization of Copper Annals of the CIRP 55 1 2006 605 608 (Pubitemid 44578487)
- (2006) CIRP Annals - Manufacturing Technology , vol.55 , Issue.1 , pp. 605-608
- Che, W.¹ Bastawros, A.² Chandra, A.³

5
- 43649083585
- Nano-Scale Scratching in Chemical-Mechanical Polishing
- N. Saka, T. Eusner, and J.H. Chun Nano-Scale Scratching in Chemical-Mechanical Polishing Annals of the CIRP 57 1 2008 341 344
- (2008) Annals of the CIRP , vol.57 , Issue.1 , pp. 341-344
- Saka, N.¹ Eusner, T.² Chun, J.H.³

6
- 67349110389
- Performance of Water-Soluble Fullerenol as Novel Functional Molecular Abrasive Grain for Polishing Nanosurfaces
- Y. Takaya, H. Tachika, H. Hayashi, K. Kokubo, and K. Suzuki Performance of Water-Soluble Fullerenol as Novel Functional Molecular Abrasive Grain for Polishing Nanosurfaces Annals of the CIRP 58 1 2009 495 498
- (2009) Annals of the CIRP , vol.58 , Issue.1 , pp. 495-498
- Takaya, Y.¹ Tachika, H.² Hayashi, H.³ Kokubo, K.⁴ Suzuki, K.⁵

7
- 0035338991
- Material removal mechanism in chemical mechanical polishing: Theory and modeling
- DOI 10.1109/66.920723, PII S0894650701035229
- J.F. Luo, and D.A. Dornfeld Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling IEEE Trans. Semiconductor Manufacturing 14 2 2001 112 133 (Pubitemid 32490672)
- (2001) IEEE Transactions on Semiconductor Manufacturing , vol.14 , Issue.2 , pp. 112-133
- Luo, J.¹ Dornfeld, D.A.²

8
- 0003459529
- Physical Electronics
- J.F. Moulder, W.F. Stickle, P.E. Sobol, and K.D. Bomben Handbook of X Ray Photoelectron Spectroscopy 1995 Physical Electronics
- (1995) Handbook of X Ray Photoelectron Spectroscopy
- Moulder, J.F.¹ Stickle, W.F.² Sobol, P.E.³ Bomben, K.D.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.