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Volumn 55, Issue 1, 2006, Pages 605-608

Surface evolution during the chemical mechanical planarization of copper

Author keywords

Nano indentation; Polishing; Surface

Indexed keywords

ETCHING; RESIDUAL STRESSES; STRESS ANALYSIS; SURFACE PHENOMENA; SURFACE ROUGHNESS;

EID: 33750068316     PISSN: 00078506     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0007-8506(07)60493-4     Document Type: Article
Times cited : (19)

References (18)
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  • 4
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  • 5
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    • Chemical-mechanical polishing of copper in alkaline media
    • Luo, W., Campbell, D. R. and Babu, S. V., 1997, Chemical-mechanical polishing of copper in alkaline media, Thin Solid Films, 311: 177-182.
    • (1997) Thin Solid Films , vol.311 , pp. 177-182
    • Luo, W.1    Campbell, D.R.2    Babu, S.V.3
  • 7
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    • On the stability of surfaces of stressed solids
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  • 8
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    • Evolution of a surface-roughness spectrum caused by stress in nanometer-scale chemical etching
    • Kim, K. S., Hurtado, J. A. and Tan, H., 1999, Evolution of a surface-roughness spectrum caused by stress in nanometer-scale chemical etching, Physical Review Letters, 83: 3872-3875.
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    • Kim, K.S.1    Hurtado, J.A.2    Tan, H.3
  • 9
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    • Herring, C., 1951, in The Physics of Powder Metallurgy, edited by Kingston, W.F., McGraw-Hill, New York, pp. 143-179.
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  • 12
  • 14
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    • Ph.D. thesis, Iowa state University
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    • On material removal mechanisms in finishing of advanced ceramics and glasses
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  • 17
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    • Pad surface roughness and slurry particle size distribution effects on material removal rate in chemical mechanical planarization
    • Wang, C., Sherman, P., Chandra, A., Dornfeld, D., 2005, Pad Surface Roughness and Slurry Particle Size Distribution Effects on Material Removal Rate in Chemical Mechanical Planarization, Annals of the CIRP, 54/1: 309-312.
    • (2005) Annals of the CIRP , vol.54 , Issue.1 , pp. 309-312
    • Wang, C.1    Sherman, P.2    Chandra, A.3    Dornfeld, D.4
  • 18


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.