An electrically tuned solid-state thermal memory based on metal-insulator transition of single-crystalline VO2 nanobeams

Advanced Functional Materials

Volumn 21, Issue 9, 2011, Pages 1602-1607

  Xie, Rongguo ^a   Bui, Cong Tinh ^b   Varghese, Binni ^a   Zhang, Qingxin ^c   Sow, Chorng Haur ^a,b   Li, Baowen ^a,b   Thong, John T L ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CONTROL; HIGH/LOW TEMPERATURE; HYSTERESIS RESPONSE; INPUT AND OUTPUTS; MACRO SCALE; ORDERS OF MAGNITUDE; SINGLE-CRYSTALLINE; THERMAL DEVICES; THERMAL MANAGEMENT; THERMAL MEMORY; VOLTAGE BIAS;

METAL INSULATOR BOUNDARIES; NANOWIRES; SEMICONDUCTOR INSULATOR BOUNDARIES; SOLID STATE DEVICES;

METAL INSULATOR TRANSITION;

EID: 79957584268     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201002436     Document Type: Article

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