Luminescent mechanism of Eu3+-doped epitaxial Gd 2O3 films grown on a Si (111) substrate using an effusion cell

Current Applied Physics

Volumn 11, Issue 4, 2011, Pages 1001-1005

  Jang, Moon Hyung ^a   Choi, Yoon Ki ^b   Chung, Kwun Bum ^c   Jeon, Hyeongtag ^d   Cho, Mann Ho ^a  

^a Yonsei University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Dankook University   (South Korea)

^d Hanyang University   (South Korea)

Author keywords

Gd2O3:Eu3+; Luminescent mechanism; Rare earth phosphor

Indexed keywords

CRITICAL DISTANCE; CRYSTALLINE FILMS; CRYSTALLINE STRUCTURE; DECAY CURVES; DIPOLE-DIPOLE; EFFUSION CELLS; EXCITATION WAVELENGTH; GD2O3:EU3+; LUMINESCENT MECHANISM; MOLE FRACTION; NON-RADIATIVE TRANSITIONS; PHOTOLUMINESCENCE CHARACTERISTICS; PHOTOLUMINESCENCE INTENSITIES; RARE-EARTH PHOSPHOR; SI (1 1 1); SI(111) SUBSTRATE;

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; GADOLINIUM; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION;

EUROPIUM;

EID: 79957566073     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.01.010     Document Type: Article

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