Ultrathin nickel oxide film as a hole buffer layer to enhance the optoelectronic performance of a polymer light-emitting diode

Optics Letters

Volumn 36, Issue 8, 2011, Pages 1521-1523

  Wang, Yongli ^a   Niu, Qiaoli ^a   Hu, Candong ^a   Wang, Wenjie ^b   He, Miao ^a   Zhang, Yong ^a   Li, Shuti ^a   Zhao, Lingzhi ^a   Wang, Xin ^a   Xu, Jia ^a   Zhu, Qiuxiang ^a   Chen, Sihai ^c  

^a Devices of Guangdong Provincial Education Department   (China)

^b NANJING UNIVERSITY   (China)

^c HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-DRIVEN; ELECTRON BEAM DEPOSITIONS; HOLE BUFFER LAYER; HOLE INJECTION; HOLE INJECTION LAYERS; INDIUM TIN OXIDE; METAL SOURCES; OXYGEN PLASMA TREATMENTS; PLED DEVICES; POLY(3 ,4-ETHYLENEDIOXYTHIOPHENE); POLYMER LEDS; POLYMER LIGHT-EMITTING DIODES; ULTRA-THIN;

CHEMICAL MODIFICATION; ELECTRON INJECTION; EQUIPMENT; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; NICKEL; NICKEL OXIDE; OXIDE FILMS; PLASMA DEPOSITION; TIN; TIN OXIDES;

BUFFER LAYERS;

EID: 79956258600     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.36.001521     Document Type: Article

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