Modeling and characterization for polarization hysteresis of ferroelectric polymers

Conference Proceedings - IEEE SOUTHEASTCON

Volumn , Issue , 2011, Pages 224-227

  Shrestha, Bikash ^a   Pieper, Ron ^a   Wondmagegn, Wudyalew ^a   Satyala, Nikhil ^a  

^a UNIVERSITY OF TEXAS AT TYLER   (United States)

Author keywords

coercive field; hysteresis; Landau coefficient; Organic ferroelectrics; polarization

Indexed keywords

COERCIVE FORCE; ELECTRIC FIELDS; FERROELECTRIC MATERIALS; FERROELECTRICITY; FINITE ELEMENT METHOD; FLUORINE COMPOUNDS; MATLAB; METAL INSULATOR BOUNDARIES; MIM DEVICES; POLARIZATION; SINGLE CRYSTALS;

2 - DIMENSIONAL; COERCIVE FIELD; FERROELECTRIC POLYMERS; HYSTERESIS CHARACTERISTICS; HYSTERESIS CURVE; LANDAU COEFFICIENTS; MODEL AND SIMULATION; ORGANIC FERROELECTRIC; ORGANICS; POLARIZATION HYSTERESIS;

HYSTERESIS;

EID: 79956126223     PISSN: 10910050     EISSN: 1558058X     Source Type: Conference Proceeding    
DOI: 10.1109/SECON.2011.5752938     Document Type: Conference Paper

References (10)

1. Z.-Y. Cheng, V. Bharti, T.-B. Xu, Haisheng Xu, T. Mai, Q.M. Zhang, "Electrostrictive Poly(vinylidene Fuoride-trifuoroethylene) Copolymers", Sensors and Actuators A 90 (2001) 138-147.
2. I. Mayergoyz and G.Bertotti (Eds.), "The Science of Hysteresis", Volume 3, Elsevier (2005).
3. Youn Jung Park, Hee June Jeong, Jiyoun Chang, Seok Ju Kang, and Cheolmin Park,"Recent Development in Polymer Ferroelectric Field Effect Transistor Memory", Journal of Semiconductor Technology and Science, Vol. 8, No. 1, March, 2008.
4. Ronald C. G. Naber, Kamal Asadi, Paul W. M. Blom, Dago M. de Leeuw, and Bert de Boer, " Organic Nonvolatile Memory Devices Based on Ferroelectricity", Adv. Mater. 2009, 21, 1-13 - 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
5. V. S. Bystrov, N K Bystrova, E V Paramonova, G Vizdrik, A V Sapronova, M Kuehn, H Kliem and A L Kholkin, "First principle calculations of molecular polarization switching in P(VDF-TrFE) ferroelectric thin Langmuir-Blodgett films", J. Phys.: Condensed Matter 19 (2007) 456210 (15pp).
6. S. L. Miller, R. D. Nasby, J. R. Schwank, M. S. Rodgers and P. V. Dressendorfer, " Device Modeling of Ferroelectric Capacitors", J. Appl. Phys. 68(12), 15 December 1990.
7. K. Rabe, Ch. H Ahn, J. M. Triscone (Eds.), "Physics of Ferroelectrics, A Modern Perspective ", Springer.
8. Ciaran J. Brennan, "A Physical Model for the Electrical Hysteresis of Thin-Film Ferroelectric Capacitors", Ferroelectrics, 1992, Vol. 132, pp. 245-257.
9. Ying-Long Wang, Xing-Yuan Wang, Li-Zhi Chu, Ze-Chao Deng, Wei-Hua Liang, Bao-Ting Liu, Guang-Sheng Fu, N. Wongdamnern, T. Sareein, R. Yimnirun, "Simulation of Hysteresis loops for Polycrystalline Ferroelectrics by an Extensive Landau-type Model", Physics Letters A 373 (2009) 4282-4286.
10. D. Mao, M.A. Quevedo-Lopez, H. Stiegler, B. E. Gnade, H. N. Alshareef, " Optimization of Poly( vinylidene fluride-fluoroethylene) flims as a non volatile memory for the flexible electronics.", Organic Electronics 11 (2010) 925-932.