Proton sputtering from H-terminated Si(1 0 0) surfaces with slow highly charged ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 193, Issue 1-4, 2002, Pages 804-808

  Kuroki, K ^a,b   Torii, H ^a   Komaki, K ^a   Yamazaki, Y ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL RESEARCH INSTITUTE OF POLICE SCIENCE   (Japan)

^c RIKEN   (Japan)

Author keywords

Highly charged ion; Position sensitive detector; Proton sputtering; Si(1 0 0); Time of flight

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ION BOMBARDMENT; KINETIC ENERGY; PROTONS; SPUTTERING;

PROTON SPUTTERING;

SEMICONDUCTING SILICON;

EID: 0036609523     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)00908-4     Document Type: Article

References (12)