Measurements of InGaAs metal-semiconductor-metal photodetectors under high-illumination conditions

Applied Physics Letters

Volumn 80, Issue 16, 2002, Pages 2848-2850

  Aliberti, K ^a   Wraback, M ^a   Stead, M ^a   Newman, P ^a   Shen, H ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DARK FIELD; FALL TIME; METAL SEMICONDUCTOR METAL PHOTODETECTOR; OPTICAL PULSE ENERGY; PEAK CURRENTS; RISETIMES; SCREENING EFFECT; TEMPORAL RESPONSE; TWO DIMENSIONAL MODEL; U-SHAPED; VELOCITY-FIELD CHARACTERISTICS;

BIAS VOLTAGE; ENERGY EFFICIENCY; HETEROJUNCTIONS; IMPULSE RESPONSE; LASER BEAM WELDING; METALS; SEMICONDUCTING INDIUM;

PHOTODETECTORS;

EID: 79956051170     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1473235     Document Type: Article

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