Transit-time considerations in metal-semiconductor-metal photodiode under high illumination conditions

Solid-State Electronics

Volumn 44, Issue 9, 2000, Pages 1627-1634

  Averine, S V ^a   Sachot, R ^b  

^a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; PHOTODETECTORS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

METAL-SEMICONDUCTOR-METAL (MSM) PHOTODIODES;

PHOTODIODES;

EID: 0034275403     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00095-2     Document Type: Article

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