NbN/TiNx/NbN/TiNx/NbN double-barrier junction arrays for programmable voltage standards

Applied Physics Letters

Volumn 80, Issue 8, 2002, Pages 1415-1417

  Yamamori, H ^a   Ishizaki, M ^a   Itoh, M ^a   Shoji, A ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE-BARRIER JUNCTION; I - V CURVE; MICROWAVE POWER; PROGRAMMABLE VOLTAGE STANDARDS; SERIES ARRAY; SI WAFER; THEORETICAL PREDICTION;

MICROWAVE GENERATION; MICROWAVE POWER TRANSMISSION; SEMICONDUCTING SILICON COMPOUNDS; TITANIUM NITRIDE;

SILICON WAFERS;

EID: 79956048838     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1453489     Document Type: Article

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