Tunable negative differential resistance controlled by spin blockade in single-electron transistors

Applied Physics Letters

Volumn 80, Issue 12, 2002, Pages 2177-2179

  Ciorga, M ^a   Pioro Ladriere, M ^a   Zawadzki, P ^a   Hawrylak, P ^a   Sachrajda, A S ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; METALLIC GATES; NEGATIVE DIFFERENTIAL RESISTANCES; SINGLE ELECTRON; SOURCE AND DRAINS; SPIN BLOCKADE; SPIN RELAXATION TIME; SPIN-POLARIZED;

ELECTRONS; HETEROJUNCTIONS;

SINGLE ELECTRON TRANSISTORS;

EID: 79956048397     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1459489     Document Type: Article

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