Thin-film photodetectors for the vacuum ultraviolet spectral region

Applied Optics

Volumn 36, Issue 13, 1997, Pages 2751-2754

  Cesare, Giampiero De ^a   Irrera, Fernanda ^a   Palma, Fabrizio ^a   Naletto, Giampiero ^b   Nicolosi, Piergiorgio ^b   Jannitti, Ermanno ^c  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; GAS LASERS; OXIDES; PHOTOSENSITIVITY; QUANTUM EFFICIENCY; SEMICONDUCTING GLASS; SILICON CARBIDE; THIN FILM DEVICES; ULTRAVIOLET RADIATION;

ELECTRON HOLE PAIRS; FULL WIDTH AT HALF MAXIMUM; THIN FILM PHOTODETECTORS; TRANSPARENT CONDUCTIVE OXIDE; VACUUM ULTRAVIOLET RADIATION;

PHOTODETECTORS;

EID: 0031145835     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.36.002751     Document Type: Article

References (11)

1. J. Janesick, T. Elliot, G. Fraschetti, S. Collins, M. Blouke, and B. Corrie, “Charge-coupled device pinning technologies, ” in Optical Sensors and Electronic Photography, M. M. Blouke and D. Pophal, eds., Proc. SPIE 1071, 153-169 (1989).
2. J. L. Wiza, “Microchannel plated detector, ” Nucl. Instrum. Methods 162, 587-601 (1979).
3. O. H. W. Siegmund, M. A. Gumming, J. Stock, and D. Marsh, “Microchannel imaging detectors for the ultraviolet, ” in Proceedings of the ESA Symposium on Photon Detection for Space Instrumentation, ESA SP-356 (European Space Agency, Paris Cedex, 1992), pp. 89-96.
4. V. Kumar and A. K. Datta, “Vacuum ultraviolet scintillators: sodium salicylite and p-terpheyl, ” Appl. Opt. 18, 1414-1417 (1979).
5. W. M. Burton and B. A. Powell, “Fluorescence of tetraphenil-butadiene in the vacuum ultraviolet, ” Appl. Opt. 12, 87-89 (1973).
6. G. de Cesare, F. Irrera, F. Palma, M. Tucci, E. Jannitti, P. Naletto, and P. Nicolosi, “Amorphous silicon-silicon carbide photodiodes with excellent sensitivity and selectivity in the vacuum ultraviolet spectrum, ” Appl. Phys. Lett. 67, 335-337 (1995).
7. Y. K. Fang, S.-B. Hwang, K.-H. Chen, C.-R. Liu, M.-J. Tsai, and L.-C. Kuo, “An amorphous SiC/Si heterojunction p-i-n diode for low-noise and high-sensitivity UV detector, ” IEEE Trans. Electron Devices ED-39, 292-296 (1992).
8. J. R. Fieberg and R. S. Muller, “Pair-production energies in silicon and germanium bombarded with low-energy electrons, ” J. Appl. Phys. 43, 3202-3208 (1972).
9. G. de Cesare, F. Galluzzi, G. Guattari, G. Leo, R. Vincenzoni, and E. Bemporad, “Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys, ” Diam. Related Mater. 2, 773-777 (1993).
10. H. Weinert, M. Petrauskas, J. Kolenda, A. Galecka, F. Wang, and R. Schwarz, “Ambipolar diffusion coefficient in a-SiC:H alloys in steady state and transient grating measurements, ” in Proceedings of the Materials Research Society Symposium (Materials Research Society, Pittsburgh, Pa., 1993), Vol. 297, pp. 497-503.
11. G. de Cesare, V. Iorio, F. Irrera, F. Palma, and M. Tucci, “Amorphous silicon UV photodetectors with rejection of the visible spectrum, ” J. Non-Crystalline Solids 198-200, 1198-1201 (1996).