Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy

Applied Physics Letters

Volumn 80, Issue 14, 2002, Pages 2511-2513

  Barbo, F ^a   Bertolo, M ^a   Bianco, A ^a   Cautero, G ^a   Fontana, S ^a   Johal, T K ^a   La Rosa, S ^a   Purandare, R C ^a   Svetchnikov, N ^a   Franciosi, A ^b   Orani, D ^b   Piccin, M ^b   Rubini, S ^b   Cimino, R ^c  

^a SINCROTRONE TRIESTE   (Italy)

^b LABORATORIO TASC   (Italy)

^c INFN LABORATORI NAZIONALI DI FRASCATI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; BANDBENDING; CROSS SECTION; CROSS-SECTIONAL STUDY; DIFFUSE PHOTONS; EXPERIMENTAL DATA; EXPERIMENTAL UNCERTAINTY; GAAS; HOMO-JUNCTIONS; INTENSITY PROFILES; PHOTOEMISSION MICROSCOPY; PHOTOEMISSION SPECTROMICROSCOPY; QUANTITATIVE INFORMATION; SCHOTTKY JUNCTIONS; SEMICONDUCTOR INTERFACES;

PHOTOEMISSION; PHOTONS;

SEMICONDUCTOR JUNCTIONS;

EID: 79956031313     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1468264     Document Type: Article

References (17)

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