Epitaxial growth of an n-type ferromagnetic semiconductor CdCr 2Se4 on GaAs(001) and GaP(001)

Applied Physics Letters

Volumn 81, Issue 8, 2002, Pages 1471-1473

  Park, Y D ^a   Hanbicki, A T ^a   Mattson, J E ^a   Jonker, B T ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BULK MATERIALS; COERCIVE FIELD; EASY AXIS; FERROMAGNETIC ORDERS; FERROMAGNETIC SEMICONDUCTOR; GAAS; GAAS(001); HYSTERETIC BEHAVIOR; IN-PLANE; ROOM TEMPERATURE; TEMPERATURE DEPENDENT; TRANSPORT DATA;

ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; GALLIUM ARSENIDE; HYSTERESIS; REMANENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 79956010958     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1498503     Document Type: Article

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