MBE growth and luminescence properties of hybrid Al(Ga)Sb/InAs/Cd(Mg)Se heterostructures

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 693-698

  Ivanov, S V ^a   Solov'ev, V A ^a   Toropov, A A ^a   Sedova, I V ^a   Terent'ev, Ya V ^a   Kaygorodov, V A ^a   Tkachman, M G ^a   Kop'ev, P S ^a   Molenkamp, L W ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

A1. Interfaces; A3. Molecular beam epitaxy; B2. Semiconducting II VI materials; B2. Semiconducting III V materials

Indexed keywords

BAND STRUCTURE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

BAND LINE-UPS;

HETEROJUNCTIONS;

EID: 0035398246     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00804-1     Document Type: Conference Paper

References (14)