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Volumn 81, Issue 14, 2002, Pages 2644-2646
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Formation of a quantum dot in a single-walled carbon nanotube using the Al top-gates
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Author keywords
[No Author keywords available]
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Indexed keywords
BARRIER POTENTIAL;
HIGH TEMPERATURE;
POWER-LAW DEPENDENCES;
SINGLE-ELECTRON DEVICES;
TEMPERATURE DEPENDENCE;
TUNNELING BARRIER;
ALUMINUM;
CARBON;
ELECTRON DEVICES;
LITHOGRAPHY;
SEMICONDUCTOR QUANTUM DOTS;
SINGLE-WALLED CARBON NANOTUBES (SWCN);
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EID: 79956000454
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1510578 Document Type: Article |
Times cited : (21)
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References (9)
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