Strain-induced electron and hole lateral confinement in semiconductor heterostructures with curved heterointerfaces

Journal of Applied Physics

Volumn 79, Issue 12, 1996, Pages 9188-9195

  De Caro, Liberato ^a   Tapfer, Leander ^a  

^a Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001483049     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362591     Document Type: Article

References (18)

1. See, for example, Science and Engineering of One- and Zero-Dimensional Semiconductors, edited by S. P. Beaumont and C. M. Sotomayor Torres, NATO ASI Series, Series B: Physics Vol. 214 (Plenum, New York, 1990).
2. E. Kapos, Optoelectronics 8, 429 (1993).
3. D. L. Smith and C. Mailhiot, Rev. Mod. Phys. 62, 173 (1990).
4. L. De Caro and L. Tapfer, Phys. Rev. B 51, 4374 (1995); 51, 4381 (1995).
5. L. De Caro and L. Tapfer, Phys. Rev. B 51, 4374 (1995); 51, 4381 (1995).
6. K. Kash, B. P. Van der Gaag, D. D. Mahoney, A. S. Gozdz, L. T. Florez, J. P. Harbison, and M. D. Sturge, Phys. Rev. Lett. 67, 1326 (1991).
7. D. Gershoni, J. S. Weiner, S. N. G. Chu, G. A. Baraff, J. M. Vandenberg, L. N. Pfeiffer, K. West, R. A. Logan, and T. Tanbun-Ek, Phys. Rev. Lett. 65, 1631 (1990).
8. M. Grundmann, O. Stier, and D. Bimberg, Phys. Rev. B 50, 14 187 (1994).
9. L. De Caro and L. Tapfer, Phys. Rev. B 48, 2298 (1993).
10. 33).
11. R. Rinaldi, R. Cingolani, L. De Caro, M. Lomascolo, M. Di Dio, L. Tapfer, U. Marti, and F. K. Reinhart, J. Opt. Soc. Am. B 13 (1996) (in press).
12. Landolt-Börnstein, Numerical Date and Functional Relationship in Science and Technology, New Series III/17d, edited by O. Madelung, M. Schulz, and H. Weiss (Springer, Berlin, 1984).
13. J. M. Hinckley and J. Singh, J. Appl. Phys. 69, 2694 (1991).
14. F. H. Pollak, Semicond. Semimetals 32, 17 (1990).
15. R. People, Phys. Rev. B 32, 1405 (1985).
16. P. Fleury and J. P. Mathieu, Physique Generale et Expirementale (Eyrolles, Paris, 1967), Vol. 6.
17. S. Niki, C. L. Lin, W. S. C. Chang, and H. H. Wieder, Appl. Phys. Lett. 55, 1339 (1989).
18. It is interesting to note that the presence of two equivalent minima in the hole confinement potential, reported by M. Grundmann and co-workers for V-groove quantum wires (Ref. 7), is not evidenced in the case of CQW. In fact, the presence of the above-mentioned minima is strictly connected to the lateral tapering of the qauntum well in V-groove quantum wires.