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Applied Physics Letters

Volumn 80, Issue 10, 2002, Pages 1794-1796

Spin polarization contrast observed in GaAs by force-detected nuclear magnetic resonance

(4) Thurber, Kent R a,b Harrell, Lee E c Fainchtein, Raúl d Smith, Doran D a

a U S ARMY RESEARCH LABORATORY (United States)

b Bldg 142 (United States)

c UNITED STATES MILITARY ACADEMY (United States)

d JOHNS HOPKINS UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SPIN POLARIZATION; GAAS; MAGNETIC RESONANCE FORCE MICROSCOPY; NUCLEAR SPINS; NUCLEAR-SPIN POLARIZATION; NUCLEAR-SPIN-LATTICE RELAXATION; POLARIZATION CONTRAST; SPINTRONIC DEVICE;

ELECTROSPINNING; GALLIUM ARSENIDE; MAGNETIC FORCE MICROSCOPY; MAGNETIC MOMENTS; NUCLEAR MAGNETIC RESONANCE; RESONANCE; SEMICONDUCTING GALLIUM; SPIN POLARIZATION;

SPIN DYNAMICS;

EID: 79955986802 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1458688 Document Type: Article

Times cited : (18)

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