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Journal of Electronic Materials

Volumn 40, Issue 5, 2011, Pages 926-931

Preparation and thermoelectric properties of la-doped SrTiO 3 ceramics

(5) Shang, Peng Peng a Zhang, Bo Ping a Liu, Yong a Li, Jing Feng b Zhu, Hong Min a

a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

b TSINGHUA UNIVERSITY (China)

Author keywords

doping; SrTiO 3; thermoelectric properties

Indexed keywords

DOPING; ELECTRICAL CONDUCTIVITY; HIGH ACTIVITY; POLYCRYSTALLINE; SOLID STATE REACTION METHOD; SRTIO; THERMOELECTRIC PROPERTIES; TIO;

CERAMIC MATERIALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; POLYCRYSTALLINE MATERIALS; STRONTIUM ALLOYS; STRONTIUM TITANATES; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

THERMAL CONDUCTIVITY;

EID: 79955924743 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-010-1452-5 Document Type: Conference Paper

Times cited : (56)

References (23)

1
- 0003980328
- CRC Florida, USA
- B. Raton, CRC Handbook of Thermoelectrics (Florida, USA: CRC, 1995).
- (1995) CRC Handbook of Thermoelectrics
- Raton, B.¹

2
- 0037289374
- 10.1179/095066003225010182 1:CAS:528:DC%2BD3sXisVekurc%3D
- G Chen MS Dresselhaus G Dresselhaus JP Fleurial T Caillat 2003 Int. Mater. Rev. 48 45 10.1179/095066003225010182 1:CAS:528:DC%2BD3sXisVekurc%3D
- (2003) Int. Mater. Rev. , vol.48 , pp. 45
- Chen, G.¹ Dresselhaus, M.S.² Dresselhaus, G.³ Fleurial, J.P.⁴ Caillat, T.⁵

3
- 46449085036
- High-thermoelectric performance of nanostructured bismuth antimony telluride bulk alloys
- DOI 10.1126/science.1156446
- B Poudel Q Hao Y Ma YC Lan A Minnich B Yu X Yan DZ Wang A Muto D Vashaee XY Chen JM Liu MS Dresselhaus G Chen ZF Ren 2008 Science 320 634 10.1126/science.1156446 1:CAS:528:DC%2BD1cXltFyisLk%3D (Pubitemid 351928340)
- (2008) Science , vol.320 , Issue.5876 , pp. 634-638
- Poudel, B.¹ Hao, Q.² Ma, Y.³ Lan, Y.⁴ Minnich, A.⁵ Yu, B.⁶ Yan, X.⁷ Wang, D.⁸ Muto, A.⁹ Vashaee, D.¹⁰ Chen, X.¹¹ Liu, J.¹² Dresselhaus, M.S.¹³ Chen, G.¹⁴ Ren, Z.¹⁵

4
- 33846099562
- 3 with layered nanostructure
- DOI 10.1063/1.2425007
- XF Tang WJ Xie H Li WY Zhao QJ Zhang M Niino 2007 Appl. Phys. Lett. 90 012102 10.1063/1.2425007 (Pubitemid 46068315)
- (2007) Applied Physics Letters , vol.90 , Issue.1 , pp. 012102
- Tang, X.¹ Xie, W.² Li, H.³ Zhao, W.⁴ Zhang, Q.⁵ Niino, M.⁶

5
- 0000264103
- 10.1063/1.1311597 1:CAS:528:DC%2BD3cXmsV2qtrw%3D
- GS Nolas M Kaeser RT Littleton IV TM Tritt 2000 Appl. Phys. Lett. 77 1855 10.1063/1.1311597 1:CAS:528:DC%2BD3cXmsV2qtrw%3D
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1855
- Nolas, G.S.¹ Kaeser, M.² Littleton, I.V.R.T.³ Tritt, T.M.⁴

6
- 0035295308
- 10.1557/JMR.2001.0109 1:CAS:528:DC%2BD3MXhvVOisb0%3D
- XF Tang LD Chen T Goto T Hirai 2001 J. Mater. Res. 16 837 10.1557/JMR.2001.0109 1:CAS:528:DC%2BD3MXhvVOisb0%3D
- (2001) J. Mater. Res. , vol.16 , pp. 837
- Tang, X.F.¹ Chen, L.D.² Goto, T.³ Hirai, T.⁴

7
- 17044392300
- Effect of Ti substitution on the thermoelectric properties of (Zr,Hf)NiSn half-Heusler compounds
- DOI 10.1063/1.1868063, 082105
- S Sakurada N Shutoh 2005 Appl. Phys. Lett. 86 082105 10.1063/1.1868063 (Pubitemid 40495274)
- (2005) Applied Physics Letters , vol.86 , Issue.8 , pp. 1-3
- Sakurada, S.¹ Shutoh, N.²

8
- 54149107254
- 10.1021/ic800644x 1:CAS:528:DC%2BD1cXhtFKqsrvJ
- H Ohta K Sugiure K Koumoto 2008 Inorg. Chem. 47 8429 10.1021/ic800644x 1:CAS:528:DC%2BD1cXhtFKqsrvJ
- (2008) Inorg. Chem. , vol.47 , pp. 8429
- Ohta, H.¹ Sugiure, K.² Koumoto, K.³

9
- 2942645829
- 10.1103/PhysRevB.56.R12685 1:CAS:528:DyaK2sXnsFentrc%3D
- I Terasaki Y Sasago K Uchinokura 1997 Phys. Rev. B 56 R12685 10.1103/PhysRevB.56.R12685 1:CAS:528:DyaK2sXnsFentrc%3D
- (1997) Phys. Rev. B , vol.56 , pp. 12685
- Terasaki, I.¹ Sasago, Y.² Uchinokura, K.³

10
- 0035388069
- 10.1143/JJAP.40.4644 1:CAS:528:DC%2BD3MXlsFOqsbs%3D
- K Fujita T Mochida K Nakamura 2001 Jpn. J. Appl. Phys. 40 4644 10.1143/JJAP.40.4644 1:CAS:528:DC%2BD3MXlsFOqsbs%3D
- (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 4644
- Fujita, K.¹ Mochida, T.² Nakamura, K.³

11
- 0001057281
- 10.1103/PhysRevB.63.113104
- T Okuda K Nakanishi S Miyasaka Y Tokura 2001 Phys. Rev. B. 63 113104 10.1103/PhysRevB.63.113104
- (2001) Phys. Rev. B. , vol.63 , pp. 113104
- Okuda, T.¹ Nakanishi, K.² Miyasaka, S.³ Tokura, Y.⁴

12
- 0037450317
- 10.1016/S0925-8388(02)00972-6 1:CAS:528:DC%2BD3sXltFyhug%3D%3D
- H Muta K Kurosaki S Yamanaka 2003 J. Alloys Compd. 350 292 10.1016/S0925-8388(02)00972-6 1:CAS:528:DC%2BD3sXltFyhug%3D%3D
- (2003) J. Alloys Compd. , vol.350 , pp. 292
- Muta, H.¹ Kurosaki, K.² Yamanaka, S.³

13
- 77954214397
- 10.1016/j.materresbull.2010.03.018 1:CAS:528:DC%2BC3cXmtVGgu7s%3D
- HC Wang CL Wang WB Su J Liu Y Zhao H Peng JL Zhang ML Zhao JC Li N Yin LM Mei 2010 Mater. Res. Bull. 45 809 10.1016/j.materresbull.2010.03.018 1:CAS:528:DC%2BC3cXmtVGgu7s%3D
- (2010) Mater. Res. Bull. , vol.45 , pp. 809
- Wang, H.C.¹ Wang, C.L.² Su, W.B.³ Liu, J.⁴ Zhao, Y.⁵ Peng, H.⁶ Zhang, J.L.⁷ Zhao, M.L.⁸ Li, J.C.⁹ Yin, N.¹⁰ Mei, L.M.¹¹

14
- 34250862576
- Thermoelectric properties of combustion-synthesized lanthanum-doped strontium titanate
- DOI 10.2320/matertrans.48.1079
- LH Zhang T Tosho N Okinaka T Akiyama 2007 Mater. Trans. 48 1079 10.2320/matertrans.48.1079 1:CAS:528:DC%2BD2sXmvVams7k%3D (Pubitemid 46976136)
- (2007) Materials Transactions , vol.48 , Issue.5 , pp. 1079-1083
- Lihua, Z.¹ Tosho, T.² Okinaka, N.³ Akiyama, T.⁴

15
- 77955415646
- 10.1016/j.solidstatesciences.2010.05.005 1:CAS:528:DC%2BC3cXpt1als7Y%3D
- PP Shang BP Zhang JF Li N Ma 2010 Solid State Sci. 12 1341 10.1016/j.solidstatesciences.2010.05.005 1:CAS:528:DC%2BC3cXpt1als7Y%3D
- (2010) Solid State Sci. , vol.12 , pp. 1341
- Shang, P.P.¹ Zhang, B.P.² Li, J.F.³ Ma, N.⁴

16
- 33847636523
- 10.1016/0022-4596(91)90149-C 1:CAS:528:DyaK3MXhvFKmt70%3D
- WH Gong H Yun YB Ning JE Greedan WR Datars CV Stager 1991 J. Solid State Chem. 90 320 10.1016/0022-4596(91)90149-C 1:CAS:528:DyaK3MXhvFKmt70%3D
- (1991) J. Solid State Chem. , vol.90 , pp. 320
- Gong, W.H.¹ Yun, H.² Ning, Y.B.³ Greedan, J.E.⁴ Datars, W.R.⁵ Stager, C.V.⁶

17
- 70350430218
- 10.1063/1.3254219
- J Liu CL Wang WB Su HC Wang P Zheng JC Li JL Zhang LM Mei 2009 Appl. Phys. Lett. 95 162110 10.1063/1.3254219
- (2009) Appl. Phys. Lett. , vol.95 , pp. 162110
- Liu, J.¹ Wang, C.L.² Su, W.B.³ Wang, H.C.⁴ Zheng, P.⁵ Li, J.C.⁶ Zhang, J.L.⁷ Mei, L.M.⁸

18
- 34648834548
- 3 (R = Y, La, Sm, Gd, Dy, 0 < x ≤ 0.1)
- DOI 10.2320/matertrans.E-MRA2007836
- LH Zhang T Tosho N Okinaka T Akiyama 2007 Mater. Trans. 48 2088 10.2320/matertrans.E-MRA2007836 1:CAS:528:DC%2BD2sXhtV2gsLnJ (Pubitemid 47461061)
- (2007) Materials Transactions , vol.48 , Issue.8 , pp. 2088-2093
- Zhang, L.¹ Tosho, T.² Okinaka, N.³ Akiyama, T.⁴

19
- 0004136614
- Interscience New York
- R.R. Heikes and R.W. Ure Jr, Thermoelectricity: Science and Engineering (New York: Interscience, 1961).
- (1961) Thermoelectricity: Science and Engineering
- Heikes, R.R.¹ Ure Jr., R.W.²

20
- 0003735159
- Infosearch Ltd. London
- A.M. Ioffe, Semiconductor Thermoelements and Thermoelectric Cooling (London: Infosearch Ltd., 1957).
- (1957) Semiconductor Thermoelements and Thermoelectric Cooling
- Ioffe, A.M.¹

21
- 0036543164
- 10.2320/matertrans.43.681 1:CAS:528:DC%2BD38XksF2rsbk%3D
- XD Liu YH Park 2002 Mater. Trans. 43 681 10.2320/matertrans.43.681 1:CAS:528:DC%2BD38XksF2rsbk%3D
- (2002) Mater. Trans. , vol.43 , pp. 681
- Liu, X.D.¹ Park, Y.H.²

22
- 3042749586
- 10.1143/JJAP.43.L540 1:CAS:528:DC%2BD2cXktFKhsrs%3D
- H Obara A Yamamoto CH Lee K Kobayashi A Matsumoto R Funahashi 2004 Jap. J. Appl. Phys. 43 L540 10.1143/JJAP.43.L540 1:CAS:528:DC%2BD2cXktFKhsrs%3D
- (2004) Jap. J. Appl. Phys. , vol.43 , pp. 540
- Obara, H.¹ Yamamoto, A.² Lee, C.H.³ Kobayashi, K.⁴ Matsumoto, A.⁵ Funahashi, R.⁶

23
- 24644435126
- 3 epitaxial film at high temperature
- DOI 10.1063/1.2035889, 092108
- S Ohta T Nomura H Ohta M Hirano H Hosono K Koumoto 2005 Appl. Phys. Lett. 87 092108 10.1063/1.2035889 (Pubitemid 41284544)
- (2005) Applied Physics Letters , vol.87 , Issue.9 , pp. 1-3
- Ohta, S.¹ Nomura, T.² Ohta, H.³ Hirano, M.⁴ Hosono, H.⁵ Koumoto, K.⁶

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