Electrical properties of (Na,Ce) doped Bi 5Ti 3FeO 15 ceramics

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 5, 2011, Pages 1047-1051

  Huang, Zhen ^a   Wang, Gen Shui ^a   Li, Yu Chen ^a   Liang, Rui Hong ^a   Cao, Fei ^a   Dong, Xian Lin ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

bismuth layer structured ferroelectrics; ceramics; dielectric; piezoelectric

Indexed keywords

APPLIED ELECTRIC FIELD; BISMUTH LAYER-STRUCTURED FERROELECTRICS; CERAMICS; CURIE POINTS; DIELECTRIC; DOPANT AMOUNT; ELECTRICAL PROPERTY; LOW TEMPERATURES; PIEZOELECTRIC; PIEZOELECTRIC CONSTANT; ROOM-TEMPERATURE RESISTIVITY;

BISMUTH; CERAMIC MATERIALS; DIELECTRIC LOSSES; DOPING (ADDITIVES); ELECTRIC FIELDS; FERROELECTRIC MATERIALS; HYSTERESIS; HYSTERESIS LOOPS; IRON OXIDES; PIEZOELECTRICITY; SINTERING; SODIUM;

ELECTRIC PROPERTIES;

EID: 79955918391     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201000080     Document Type: Article

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