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Applied Physics B: Lasers and Optics

Volumn 103, Issue 1, 2011, Pages 257-261

Photoluminescence properties of Eu3+-doped Gd 2MoB2O9 phosphors for LED-based solid-state-lighting

(3) Zhang, X a Qiao, X b Seo, H J b

a CENTRAL SOUTH UNIVERSITY OF FORESTRY AND TECHNOLOGY (China)

b Pukyong National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BROAD BANDS; DECAY TIME; DOPING LEVELS; EMISSION SPECTRUMS; EXCITATION SPECTRUM; LUMINESCENT PROPERTY; NARROW LINES; NO CONCENTRATION; PHOTOLUMINESCENCE PROPERTIES;

DOPING (ADDITIVES); EMISSION SPECTROSCOPY; EXCITED STATES; GADOLINIUM; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHTING; PHOSPHORS;

EUROPIUM;

EID: 79955913594 PISSN: 09462171 EISSN: None Source Type: Journal
DOI: 10.1007/s00340-010-4306-1 Document Type: Article

Times cited : (15)

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