Point and extended defects in chemical vapour deposited diamond

Journal of Physics: Conference Series

Volumn 281, Issue 1, 2011, Pages

  Pinto, H ^a   Jones, R ^a   Goss, J P ^b   Briddon, P R ^b  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; BIREFRINGENCE; DEFECTS; DIAMONDS; DISLOCATIONS (CRYSTALS); ELECTROMAGNETIC WAVE ABSORPTION; LIGHT ABSORPTION; POINT DEFECTS; SINGLE CRYSTALS; SYNTHETIC DIAMONDS;

CHEMICAL VAPOURS; DISLOCATION ARRANGEMENT; GROWTH AXIS; LARGE STRAINS; NATURAL DIAMONDS; POINT AND EXTENDED DEFECTS; ROTATIONAL SYMMETRIES; SINGLE CRYSTAL CVD DIAMOND;

WIDE BAND GAP SEMICONDUCTORS;

EID: 79955904396     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/281/1/012023     Document Type: Conference Paper

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