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Journal of Electronic Materials

Volumn 40, Issue 5, 2011, Pages 635-640

Deposition of nanocrystalline Bi 2Te 3 films using a modified MOCVD system

(5) You, Hyunwoo a,b Bae, Sung Hwan b Kim, Jongman c Kim, Jin Sang a Park, Chan b

a Korea Institute of Science and Technology (South Korea)

b Seoul National University (South Korea)

c GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

Bi 2Te 3; MOCVD; nanocrystallite; thermoelectric

Indexed keywords

BI 2TE 3; GAAS SUBSTRATES; GAS-PHASE REACTIONS; GROWTH PARAMETERS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MIXING ROOMS; MOCVD; NANO-SIZE; NANOCRYSTALLINES; NANOSTRUCTURED FILMS; SMALL PARTICLES; SUSCEPTORS; THERMOELECTRIC; THERMOELECTRIC FILM; TOP-DOWN METHODS;

CRYSTALLITES; GALLIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOPARTICLES; PHASE INTERFACES; SUBSTRATES;

BISMUTH;

EID: 79955901629 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-010-1490-z Document Type: Conference Paper

Times cited : (17)

References (17)

1
- 0035148061
- Growth of p- and n-type bismuth telluride thin films by co-evaporation
- DOI 10.1016/S0022-0248(00)00922-2
- H Zou DM Powe G Min 2001 J. Cryst. Growth 222 82 10.1016/S0022-0248(00) 00922-2 1:CAS:528:DC%2BD3MXisFWqug%3D%3D (Pubitemid 32092246)
- (2001) Journal of Crystal Growth , vol.222 , Issue.1-2 , pp. 82-87
- Zou, H.¹ Rowe, D.M.² Min, G.³

2
- 0031536045
- 10.1116/1.580826
- C Shafai MJ Brett 2001 J. Vac. Sci. Technol. A 15 2798 10.1116/1.580826
- (2001) J. Vac. Sci. Technol. A , vol.15 , pp. 2798
- Shafai, C.¹ Brett, M.J.²

3
- 33646477433
- 10.1016/j.jcrysgro.2006.01.024 1:CAS:528:DC%2BD28XjvVGntLw%3D
- Y-C Jung J-H Kim S-H Suh B-K Ju J-S Kim 2006 J. Cryst. Growth 290 441 10.1016/j.jcrysgro.2006.01.024 1:CAS:528:DC%2BD28XjvVGntLw%3D
- (2006) J. Cryst. Growth , vol.290 , pp. 441
- Jung, Y.-C.¹ Kim, J.-H.² Suh, S.-H.³ Ju, B.-K.⁴ Kim, J.-S.⁵

4
- 11844291870
- 1:CAS:528:DC%2BD38XovFCgsbs%3D
- H Yan N Toshima 2002 Kobunshi 51 885 1:CAS:528:DC%2BD38XovFCgsbs%3D
- (2002) Kobunshi , vol.51 , pp. 885
- Yan, H.¹ Toshima, N.²

5
- 0141963736
- LD Hicks MS Dresselhaus 1993 Phys. Rev. B 47 631
- (1993) Phys. Rev. B , vol.47 , pp. 631
- Hicks, L.D.¹ Dresselhaus, M.S.²

6
- 0035846181
- Thin-film thermoelectric devices with high room-temperature figures of merit
- DOI 10.1038/35098012
- R Venkatasubramanian E Siivola T Colpitts B O'quinn 2001 Nature 413 597 10.1038/35098012 1:CAS:528:DC%2BD3MXnslehtLs%3D (Pubitemid 32964053)
- (2001) Nature , vol.413 , Issue.6856 , pp. 597-602
- Venkatasubramanian, R.¹ Siivola, E.² Colpitts, T.³ O'Quinn, B.⁴

7
- 0037183949
- 10.1126/science.1072886 1:CAS:528:DC%2BD38XntlWlsbc%3D
- TC Harman PJ Taylor MP Walsh BE LaForge 2002 Science 297 2229 10.1126/science.1072886 1:CAS:528:DC%2BD38XntlWlsbc%3D
- (2002) Science , vol.297 , pp. 2229
- Harman, T.C.¹ Taylor, P.J.² Walsh, M.P.³ Laforge, B.E.⁴

8
- 64449083272
- 10.1038/nnano.2008.417 1:CAS:528:DC%2BD1MXktFWktb0%3D
- I Chowdhury R Prasher K Lofgreen G Chrysler S Narasimhan R Mahajan D Koester R Alley R Venkatasubramanian 2009 Nat. Nanotechnol. 4 235 10.1038/nnano.2008.417 1:CAS:528:DC%2BD1MXktFWktb0%3D
- (2009) Nat. Nanotechnol. , vol.4 , pp. 235
- Chowdhury, I.¹ Prasher, R.² Lofgreen, K.³ Chrysler, G.⁴ Narasimhan, S.⁵ Mahajan, R.⁶ Koester, D.⁷ Alley, R.⁸ Venkatasubramanian, R.⁹

9
- 55249102920
- 10.1063/1.2990774
- M Takashiri K Miyazaki S Tanaka J Kurosaki D Nagai H Tsukamoto 2008 J. Appl. Phys. 104 084302 10.1063/1.2990774
- (2008) J. Appl. Phys. , vol.104 , pp. 084302
- Takashiri, M.¹ Miyazaki, K.² Tanaka, S.³ Kurosaki, J.⁴ Nagai, D.⁵ Tsukamoto, H.⁶

10
- 33846055397
- 3 films on (001) GaAs vicinal substrates
- DOI 10.1063/1.2399305
- J-H Kim D-Y Jeong B-K Ju J-S Kim 2006 J. Appl. Phys. 100 123501 10.1063/1.2399305 (Pubitemid 46058144)
- (2006) Journal of Applied Physics , vol.100 , Issue.12 , pp. 123501
- Kim, J.-H.¹ Jeong, D.-Y.² Kim, J.-S.³ Ju, B.-K.⁴

11
- 0001606696
- 10.1103/PhysRevB.50.14489 1:CAS:528:DyaK2MXisVGgsLs%3D
- C Ratsch MD Nelson A Zangwill 1994 Phys. Rev. B 50 14489 10.1103/PhysRevB.50.14489 1:CAS:528:DyaK2MXisVGgsLs%3D
- (1994) Phys. Rev. B , vol.50 , pp. 14489
- Ratsch, C.¹ Nelson, M.D.² Zangwill, A.³

12
- 33845739858
- J.-H. Kim, Y.-C. Jung, S.-H. Suh, and J.-S. Kim, J. Nanosci. Nanotechnol. 6, 3325 (2006).
- (2006) J. Nanosci. Nanotechnol. , vol.6 , pp. 3325
- Kim, J.-H.¹ Jung, Y.-C.² Suh, S.-H.³ Kim, J.-S.⁴

13
- 65649152654
- 10.3938/jkps.54.1589 1:CAS:528:DC%2BD1MXlvFOjsbg%3D
- S-D Kwon J-S Kim 2009 J. Korean Phys. Soc. 54 1589 10.3938/jkps.54.1589 1:CAS:528:DC%2BD1MXlvFOjsbg%3D
- (2009) J. Korean Phys. Soc. , vol.54 , pp. 1589
- Kwon, S.-D.¹ Kim, J.-S.²

14
- 0033311897
- 3 thin films by MOCVD
- DOI 10.1016/S0921-5107(99)00142-7
- A Giani A Boulouz F Pascal-Delannoy A Foucaran E Charles A Boyer 1999 Mater. Sci. Eng. B64 19 10.1016/S0921-5107(99)00142-7 1:CAS:528: DyaK1MXkvVCgs78%3D (Pubitemid 30508986)
- (1999) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.64 , Issue.1 , pp. 19-24
- Giani, A.¹ Boulouz, A.² Pascal-Delannoy, F.³ Foucaran, A.⁴ Charles, E.⁵ Boyer, A.⁶

15
- 0032478432
- 10.1016/S0921-5107(98)00108-1
- A Foucaran A Sackda A Giani E Pascal-Delannoy A Boyer 1998 Mater. Sci. Eng. B 52 154 10.1016/S0921-5107(98)00108-1
- (1998) Mater. Sci. Eng. B , vol.52 , pp. 154
- Foucaran, A.¹ Sackda, A.² Giani, A.³ Pascal-Delannoy, E.⁴ Boyer, A.⁵

16
- 0024029579
- 10.1007/BF01730298 1:CAS:528:DyaL1cXmtVamt70%3D
- E Charles E Groubert A Boyer 1988 J. Mater. Sci. Lett. 7 575 10.1007/BF01730298 1:CAS:528:DyaL1cXmtVamt70%3D
- (1988) J. Mater. Sci. Lett. , vol.7 , pp. 575
- Charles, E.¹ Groubert, E.² Boyer, A.³

17
- 0002540899
- TC Harman SE Miller HL Goeing 1955 Bull. Am. Phys. Soc. 30 35
- (1955) Bull. Am. Phys. Soc. , vol.30 , pp. 35
- Harman, T.C.¹ Miller, S.E.² Goeing, H.L.³

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