Properties of fast response room temperature ZnO-Si heterojunction gas nanosensors

IEEE Transactions on Nanotechnology

Volumn 10, Issue 3, 2011, Pages 652-656

  Iliadis, Agis A ^a,b   Ali, Hasina A ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b UNIVERSITY OF THE AEGEAN   (Greece)

Author keywords

heterojunction; nanosensors; Si; ZnO

Indexed keywords

BIAS CONDITIONS; CMOS COMPATIBLE; CMOS TECHNOLOGY; FAST RESPONSE; FUNCTIONALIZATIONS; GAS CONCENTRATION; GAS NANOSENSOR; HIGH SENSITIVITY; HYDROGEN GAS; MATRIX; METAL-OXIDE; MONOLITHIC INTEGRATION; NANODIODES; NANOFABRICATION; P-TYPE; RECOVERY TIME; RESPONSIVITY; ROOM TEMPERATURE; ROOM-TEMPERATURE OPERATION; SI; SI SUBSTRATES; SI WAFER; ZNO; ZNO NANOPARTICLES;

CMOS INTEGRATED CIRCUITS; HETEROJUNCTIONS; NANOPARTICLES; NANOSENSORS; SELF ASSEMBLY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; ZINC OXIDE;

DENSITY OF GASES;

EID: 79955896361     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2089637     Document Type: Article

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