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Volumn 375, Issue 1-2, 2011, Pages 96-103

Electronic origins for sulfur interactions with palladium alloys for hydrogen-selective membranes

Author keywords

DFT; Hydrogen membrane; Pd alloys; Sulfur tolerance

Indexed keywords

ADSORPTION ENTHALPIES; ADSORPTION STRENGTH; ATOMIC MODELING; BINARY SYSTEMS; BONDING BEHAVIOR; BONDING STATE; BONDING STRENGTH; D-BAND CENTERS; DENSITY OF STATE; DFT; ELECTRONIC CHARACTERISTICS; ELECTRONIC COUPLING; ELECTRONIC ORIGIN; ENERGY DIFFERENCES; HYDROGEN MEMBRANE; HYDROGEN-SELECTIVE MEMBRANES; LINEAR CORRELATION; LOWER ENERGIES; ORBITALS; PARTIAL DESORPTION; PARTIAL INCORPORATION; PD ALLOY; REVERSIBLE ADSORPTION; SELECTIVE MEMBRANES; STABLE CONFIGURATION; SULFUR TOLERANCE; SURFACE SITES;

EID: 79955855926     PISSN: 03767388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.memsci.2011.03.018     Document Type: Article
Times cited : (23)

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