High speed terahertz modulation from metamaterials with embedded high electron mobility transistors

Optics Express

Volumn 19, Issue 10, 2011, Pages 9968-9975

  Shrekenhamer, David ^a   Rout, Saroj ^b   Strikwerda, Andrew C ^c   Bingham, Chris ^a   Averitt, Richard D ^c   Sonkusale, Sameer ^b   Padilla, Willie J ^a  

^a BOSTON COLLEGE   (United States)

^b TUFTS UNIVERSITY   (United States)

^c Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; ELECTRONIC EQUIPMENT; GALLIUM ALLOYS; GALLIUM ARSENIDE; METAMATERIALS; MODULATION; MONOLITHIC INTEGRATED CIRCUITS; NATURAL FREQUENCIES; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSISTORS;

ELECTRICALLY TUNABLE; EXPERIMENTAL STUDIES; MONOLITHIC INTEGRATION; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; RESONANT FREQUENCIES; SEMICONDUCTOR TECHNOLOGY; TERAHERTZ; THZ DEVICES; THZ-TDS; TIME-DOMAIN SPECTROMETER; UNIT CELLS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79955827421     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.009968     Document Type: Article

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