Top transmission grating GaN LED simulations for light extraction improvement

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7933, Issue , 2011, Pages

  Trieu, Simeon ^a,b   Jin, Xiaomin ^a,b   Ellaboudy, Ashton ^a   Zhang, Bei ^b   Kang, Xiang Ning ^b   Zhang, Guo Yi ^b   Chang, Xiong ^b   Wei, Wei ^b   Jian, Sun Yong ^b   Xing, Fu Xing ^b  

^a CALIFORNIA POLYTECHNIC STATE UNIVERSITY   (United States)

^b PEKING UNIVERSITY   (China)

Author keywords

Gallium Nitride; grating; Light Emitting Diode

Indexed keywords

BOTTOM REFLECTION; CLOSELY PACKED STRUCTURES; CYLINDRICAL GRATINGS; FEATURE SIZES; GRATING; GRATING CELLS; GRATING STRUCTURES; INDIUM TIN OXIDE; LATTICE ARRANGEMENTS; LED LIGHTS; LIGHT EXTRACTION; LIGHT-EXTRACTION EFFICIENCY; MAXWELL'S EQUATIONS; NANO SCALE; QUARTER-WAVELENGTH; REFLECTION GRATINGS; THREE PARAMETERS; TRANSMISSION GRATINGS; UNIT CELLS; WAVELENGTH OF LIGHT;

COMPUTATIONAL ELECTROMAGNETICS; CRYSTAL SYMMETRY; EFFICIENCY; ELECTROMAGNETISM; ELECTROOPTICAL DEVICES; EXTRACTION; FINITE DIFFERENCE TIME DOMAIN METHOD; GALLIUM NITRIDE; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; LIGHT REFLECTION; MAXWELL EQUATIONS; OPTOELECTRONIC DEVICES; PHOTONIC CRYSTALS; TIME DOMAIN ANALYSIS; TIN; TIN OXIDES;

LIGHT TRANSMISSION;

EID: 79955773072     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.871595     Document Type: Conference Paper

References (6)

1. Svensk, P. T. Torma, S. Suihkonen, M. Ali, H. Lipsanen, M. Sopanen, A. Odnoblyudov, V. E. Bougrov, "Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer," J. of Crystal Growth, 310, 5154-5157 (2008).
2. R. H. Horng, C. C. Yang, J. Y. Wu, S. H. Huang, C. E. Lee, D. S. Wuu, "GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography," Appl. Phys. Lett., 86, 221101 (2005).
3. H.W. Huang, C. C. Kao, J. T. Chu, H. C. Kuo, S. C. Wang, C. C. Yu, "Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface," IEEE Phot. Tech. Lett., 17, 9383-9385 (2005).
4. T. X. Lee, C. Y. Lin, S. H. Ma, C. C. Sun, "Analysis of position-dependent light extraction of GaN-based LEDs," Optics Express, 13, 4175-4179 (2005).
5. G. Hatakoshi, Y. Hattori, S. Saito, N. Shida, and S. Ninoue, "Device Simulator for Designing High-Efficiency Light-Emitting Diodes," Jpn. J. Appl. Phys., 46(8B), 5419-5425 (2007). (Pubitemid 47320149)
6. Y. A. Chen, N. Y. Liang, L. H. Laih, W. C. Tsay, M. N. Chang, J. W. Hong, "Improvement of electroluminescence characteristics of porous silicon LED by using amorphous silicon layers," Elec. Lett., 33, 1489-1490 (1997).