Planar silicon SPADs with improved photon detection efficiency

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7945, Issue , 2011, Pages

  Gulinatti, Angelo ^a   Panzeri, Francesco ^a   Rech, Ivan ^a   MacCagnani, Piera ^b   Ghioni, Massimo ^a,c   Cova, Sergio D ^a,c  

^a POLITECNICO DI MILANO   (Italy)

^b CNR   (Italy)

^c MPD Micro Photon Devices   (Italy)

Author keywords

Enhanced Photon Detection Efficiency; Photon Detection Efficiency (PDE); Single Photon Avalanche Diode (SPAD); Time Correlated Single Photon Counting (TCSPC)

Indexed keywords

BREAKDOWN VOLTAGE; DEVICE DESIGN; EDGE BREAKDOWN; ELECTRIC FIELD PROFILES; EXCELLENT PERFORMANCE; GOOD TIMING; GUARD-RINGS; NEW DEVICES; PHOTON DETECTION; PHOTON DETECTION EFFICIENCY; PHOTON DETECTION EFFICIENCY (PDE); PHOTON TIMING; SEMICONDUCTOR TECHNOLOGY; SINGLE PHOTON AVALANCHE DIODE; SINGLE-PHOTON AVALANCHE DIODE (SPAD); THICK EPITAXIAL LAYERS; TIME CORRELATED SINGLE PHOTON COUNTING (TCSPC);

AVALANCHE DIODES; EFFICIENCY; ELECTRIC FIELDS; HETEROJUNCTION BIPOLAR TRANSISTORS; MULTIPHOTON PROCESSES; NANOPHOTONICS; PARTICLE BEAMS; PHOTODETECTORS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TIMING JITTER;

PHOTONS;

EID: 79955771673     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.874685     Document Type: Conference Paper

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