Optical and magneto-optical properties of erbium doped InGaN and GaN epilayers

Optical Materials

Volumn 33, Issue 7, 2011, Pages 1059-1062

  Woodward, N ^a   Dierolf, V ^a   Lin, J Y ^b   Jiang, H X ^b   Zavada, J M ^c  

^a LEHIGH UNIVERSITY   (United States)

^b Texas Tech University   (United States)

^c North Carolina State University   (United States)

Author keywords

Luminescence; Rare earth; Zeeman splitting

Indexed keywords

EFFICIENCY; EMISSION SPECTROSCOPY; ERBIUM; GALLIUM NITRIDE; LUMINESCENCE; OPTICAL PROPERTIES; RARE EARTHS; SEMICONDUCTOR ALLOYS;

COMBINED EXCITATION-EMISSION SPECTROSCOPY; CONTRIBUTING FACTOR; EMISSION EFFICIENCIES; NONRADIATIVE DECAYS; OPTICAL AND MAGNETO-OPTICAL PROPERTIES; RESONANT EXCITATION; UP-CONVERSION EFFICIENCY; ZEEMAN SPLITTINGS;

III-V SEMICONDUCTORS;

EID: 79955546730     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2010.07.007     Document Type: Conference Paper

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