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Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

Interfacial structure and transport properties of Fe/GaAs(001)

(6) Fleet, L R a Kobayashi, H b Ohno, Y b Kim, J Y c Barnes, C H W c Hirohata, A a,d

a UNIVERSITY OF YORK (United Kingdom)

b TOHOKU UNIVERSITY (Japan)

c UNIVERSITY OF CAMBRIDGE (United Kingdom)

d JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC ORDERING; BARRIER HEIGHTS; ELECTRICAL METHODS; FE ATOMS; FE FILMS; GAAS; HANLE EFFECTS; INTERFACIAL ATOMIC STRUCTURE; INTERFACIAL STRUCTURES; SPIN-POLARIZED CURRENTS; THREE-TERMINAL DEVICES;

ATOMS; ELECTRIC PROPERTIES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; TRANSPORT PROPERTIES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 79955403201 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3554267 Document Type: Conference Paper

Times cited : (11)

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