Schottky barrier height in Fe/GaAs films

IEEE Transactions on Magnetics

Volumn 46, Issue 6, 2010, Pages 1737-1740

  Fleet, L R ^a   Yoshida, K ^a   Kobayashi, H ^b   Ohno, Y ^b   Kurebayashi, H ^c   Kim, J Y ^c   Barnes, C H W ^c   Hirohata, A ^a,d  

^a UNIVERSITY OF YORK   (United Kingdom)

^b TOHOKU UNIVERSITY   (Japan)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Fe; GaAs and Schottky barrier; Spin polarized injection; Spintronics

Indexed keywords

ANNEALING; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; IRON; IRON COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SPINTRONICS; TEMPERATURE DISTRIBUTION;

EFFECT OF ANNEALING; INTERFACIAL STRUCTURES; REDUCED TEMPERATURE DEPENDENCE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SPIN-POLARIZED INJECTION; TEMPERATURE DEPENDENCE; WIDE TEMPERATURE RANGES;

SCHOTTKY BARRIER DIODES;

EID: 77952801324     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2010.2045483     Document Type: Article

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