Optical investigation of cubic SiC layers grown on hexagonal SiC substrates by CVD and VLS

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 403-406

  Habka, N ^a   Souliere V ^a   Bluet, J M ^b   Soueidan, M ^a   Ferro, G ^a   Monteil, Y ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

3C SiC; CVD; Micro IR reflectance; Optical characterization; Photoluminescence; VLS

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTERIZED TOMOGRAPHY; INFRARED IMAGING; PHASE INTERFACES; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; REFLECTION; SEMICONDUCTOR DOPING; SUBSTRATES; TEMPERATURE; TWO DIMENSIONAL ELECTRON GAS;

3C-SIC; CHEMICAL VAPOUR DEPOSITION; CUBIC SILICON CARBIDE (3C-SIC); LOW TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPIES; OPTICAL CHARACTERIZATION; OPTICAL INVESTIGATION; PHOTOLUMINESCENCE SPECTRUM; VAPOUR-LIQUID-SOLID MECHANISMS;

SILICON CARBIDE;

EID: 38549166200     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.403     Document Type: Conference Paper

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