Geometrical control of 3C and 6H-SiC nucleation on low off-axis substrates

Materials Science Forum

Volumn 679-680, Issue , 2011, Pages 103-106

  Jokubavicius, Valdas ^a   Liljedahl, Rickard ^a   Ou, Yiyu ^b   Ou, Haiyan ^b   Kamiyama, Satoshi ^a,c   Yakimova, Rositza ^a   Syväjärvi, Mikael ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^c MEIJO UNIVERSITY   (Japan)

Author keywords

3C SiC; 6H SiC; Geometrical control; Sublimation epitaxy

Indexed keywords

CRYSTAL ORIENTATION; EPILAYERS; GEOMETRY; SUBSTRATES;

3C-SIC; 6H-SIC; CRYSTAL QUALITIES; GEOMETRICAL CONTROL; LOW OFF-AXIS 6H-SIC; PROCESS PARAMETERS; SIC POLYTYPES; SUBLIMATION EPITAXY;

SILICON CARBIDE;

EID: 79955092347     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.679-680.103     Document Type: Conference Paper

References (4)

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2. M. Syväjärvi and R. Yakimova: "Sublimation epitaxial growth of hexagonal and cubic SiC", Elsevier, in a forthcoming encyclopedia - the Comprehensive Semiconductor Science & Technology (SEST), Pallab Bhattacharya, Roberto Fornari and Hiroshi Kamimura (Eds), ISBN 978-0-444-53144-5 , to be published (2011)
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4. M. Syväjärvi, R. Yakimova, H. Jacobsson, and E. Janzén: J. Appl. Phys. Vol. 88 (2000), p. 1407