Components and interconnection technologies for photonic-assisted routers toward green networks

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 2, 2011, Pages 347-356

  Nishimura, Shinji ^a   Shinoda, Kazunori ^a   Lee, Yong ^a   Ono, Goichi ^a   Fukuda, Koji ^a   Yuki, Fumio ^a   Takemoto, Takashi ^a   Toyoda, Hidehiro ^a   Yamada, Masaki ^a   Tsuji, Shinji ^a   Ikeda, Naoya ^b  

^a HITACHI LTD   (Japan)

^b Alaxala Networks   (Japan)

Author keywords

communication systems; Computer networks; energy management; network interfaces; optical interconnections

Indexed keywords

ADVANCED NETWORKS; CMOS DEVICES; ELECTRICAL DEVICES; ENERGY EFFICIENT; ETHERNET TECHNOLOGY; HIGH-SPEED; I/O PORTS; INPUT/OUTPUT; INTERCONNECTION TECHNOLOGY; LOW POWER; NETWORK EQUIPMENT; NETWORK INTERFACES; OPTICAL BACKPLANES; OPTICAL INTERCONNECTIONS; PHOTONIC TECHNOLOGIES; POWER CONSUMED; POWER CONSUMPTION; POWER EFFICIENT; POWER-SAVING;

COMMUNICATION SYSTEMS; ENERGY MANAGEMENT; INTERFACES (COMPUTER); INTERNET; NETWORK MANAGEMENT; OPTICAL COMMUNICATION; OPTICAL INTERCONNECTS; TECHNOLOGY;

PHOTONICS;

EID: 79954601667     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2066261     Document Type: Article

References (30)

1. [Online]. Available: http://www.intel. com/design/corei7/documentation. htm, 2011.
2. M. Yamada, T. Yazaki, N. Matsuyama, and T. Hayashi, "Power efficient approach and performance control for network routers," presented at the GreenComm, Dresden, Germany, 2009.
3. M. Yamada, T. Yazaki, S. Nishimura, and N. Ikeda, "Technologies to save power for carrier class routers and switches," presented at the SAINT, Turku, Finland, 2008.
4. IEEE 802.3 Higher Speed Study Group. [Online]. Available: http://www.ieee802.org/3/hssg/index.html
5. IEEE 802.3. (2006, Jul.). "Higher speed study group callfor- interest," IEEE 802 plenary meeting. [Online]. Available: http://www.ieee802.org/3/cfi/0706-1/CFI-01-0706.pdf.
6. IEEE P802.3ba 40 Gb/s and 100 Gb/s Ethernet Task Force. [Online]. Available: http://www.ieee802.org/3/ba/index.html.
7. IEEE Draft Standard for Information Technology - Telecommunications and Information Exchange Between Systems - Local and Metropolitan Area Networks - Specific Requirements Part 3: Carrier Sense Multiple Access with Collision Detection (CSMA/CD) Access Method and Physical Layer Specifications -Amendment: MediaAccess Control Parameters, Physical Layers and Management Parameters for 40 Gb/s and 100 Gb/s Operation, 2010.
8. ITU-T SG 15, "Optical Transport Networks & Technologies," [Online]. Available: http://www.itu.int/ITU-T/studygroups/com15/otn/.
9. C.Cole, B. Huebner, P. Anslow, J. Johnson, R. Nagarajan, and H. Oomori. (2008). "100GE 10 km SMF PMD," [Online]. Available: http://www.ieee802.org/3/ba/public/may08/cole-01-0508.pdf.
10. C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Hsieh, "High-performance uncooled 1.3-ìmAlxGayIn1-x-yAs/ InP strained-layer quantum-well lasers for subscriber loop applications," IEEE J. Quantum Electron., vol. 30, no. 2, pp. 511-523, Feb. 1994.
11. K. Nakahara, T. Tsuchiya, T. Kitatani, K. Shinoda, T. Taniguchi, S. Fujisaki, T. Kikawa, E. Nomoto, F. Hamano, M. Sawada, and T. Yuasa, "1.3-ìm InGaAlAs directly modulated MQW RWG DFB lasers operating over 10 Gb/s and 100° C," presented at the Opt. Fiber Commun. Conf., Los Angeles, CA, Feb. 23-27, 2004, Paper ThD1.
12. R. Kobayashi, A. Ito, S. Kato, Y. Muroya, T. Koui, Y. Sakata, J. Shimizu, and S. Ishikawa, "Low drive-current and wide temperature operation of 1.3-ìm AlGaInAs-MQW BH-DFB lasers by laterally enhanced cladding layer growth," presented at the Opt. Fiber Commun. Conf./Nat. Fiber Opt. Eng. Conf., San Diego, CA, Feb. 24-28, 2008, Paper OThK2.
13. C. L. Schow, F. E. Doany, C. W. Baks, Y. H. Kwark, D. Kuchta, and J. A. Kash, "A single-chip CMOS-based parallel optical transceiver capable of 240-Gb/s bidirectional data rates," J. Lightw. Technol., vol. 27, no. 7, pp. 915-929, Apr. 2009.
14. S. Palermo,A. Emami-Neyestanak, and M. Horowitz, "A 90 nmCMOS16 Gb/s transceiver for optical interconnects," IEEE J. Solid-State Circuits, vol. 43, no. 5, pp. 1235-1246, May 2008. (Pubitemid 351596354)
15. S. M. Park and H.-J. Yoo, "1.25 Gb/s regulated cascade CMOS transimpedance amplifier for Gigabit Ethernet applications," IEEE J. Solid- State Circuits, vol. 39, no. 1, pp. 112-121, Jan. 2004.
16. B. Razavi, "Limiting amplifiers and output buffers," in Design of Integrated Circuits for Optical Communications. New York:McGraw-Hill, 2003, pp. 136-140.
17. T. Takemoto, F. Yuuki, H. Yamashita, T. Ban, M. Kono, Y. Lee, T. Saito, S. Tsuji, and S. Nishimura, "A 25-Gb/s, 2.8-mW/Gb/s low power CMOS optical receiver for 100-Gb/s ethenet solution," presented at the 35th ECOC, Vienna, Austria, Sep. 2009, Paper 9.2.1.
18. Y. Lee, K. Nagatsuma, K. Shinoda, K. Adachi, K. Hosomi, T. Ban, S. Tsuji, Y. Matsuoka, S. Tanaka, R. Mita, T. Sugawara, and M. Aoki, "High- performance PIN photodiode with an integrated aspheric microlens," presented at the 14th OECC, Hong Kong, Jul. 2009.
19. T. Ban, Y. Lee, S. Makino, H. Hayashi, H. Toyoda, M. Shishikura, T. Sugawara, S. Tanaka, S. Tsuji, M. Aoki, M. Sasada, H. Takamatsu, H. Yamamoto, and M. Okayasu, "25-Gbps receiver for 100-Gbps ethernet employing cost-effective small coaxial package," presented at the 34th ECOC, We.1. C.6, Brussels, Belgium, Sep. 2008.
20. J. D'Ambrosia, D. Stauffer, and C. Cole. (2010). "CEI-28G: Paving the way for 100 Gigabit," [Online]. Available: http://www.oiforum.com.
21. J. Poulton, R. Palmer, A. M. Fuller, T. Greer, J. Eyles, W. J. Dally, and M. Horowitz, "A 14-mW 6.25-Gb/s transceiver in 90-nm CMOS," IEEE J. Solid-State Circuits, vol. 42, no. 12, pp. 2745-2757, Dec. 2007.
22. F. O'Mahony,J. ,Kennedy,J. E., Jaussi,G. ,Balamurugan,M., Mansuri,C., Roberts,S., Shekhar,R., Mooney,B., Casper,A 47 × 10 Gb/s 1.4 mW/(Gb/s) parallel interface in 45 nm CMOS.,in Proc. IEEE Int. Solid- State Conf. Dig. Tech. Papers, Feb.,2010.,156-157.
23. G. Balamurugan, F. O'Mahony, M. Mansuri, J. E. Jaussi, J. T. Kennedy, and B. Casper, "A 5-to-25 Gb/s 1.6-to-3.8 mW/(Gb/s) reconfigurable transceiver I 45 nm CMOS," in Proc. IEEE Int. Solid-State Conf. Dig. Tech. Papers, Feb. 2010, pp. 372-373.
24. K. Fukuda, H. Yamashita, G. Ono, R. Nemoto, E. Suzuki, T. Takemoto, F. Yuki, and T. Saito, "A 12.3 mW 12.5 Gb/s full-featured transceiver in 65 nm CMOS," in Proc. IEEE Int. Solid-State Conf. Dig. Tech. Papers, Feb., 2010, pp. 368-369.
25. S. A. Blockhin, J. A. Lott, A. Mutig, G. Fiol, N. N. Ledentsov, M. V. Maximov, A.M. Nadtochiy, V. A. Shchukin, and D. Bimberg, "Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s," Electron. Lett., vol. 45, no. 10, pp. 501-503, May 2009.
26. T. Anan, N. Suzuki, K. Yashiki, K. Fukatsu, H. Hatakeyama, T. Akagawa, K. Tokutome, and M. Tsuji, "High-speed 1.1-ìm-range InGaAs VCSELs," presented at the Opt. Fiber Commun. Conf./Nat. Fiber Opt. Eng. Conf., San Diego, CA, Feb. 24-28, 2008, Paper OThS5.
27. K. Adachi, K. Shinoda, T. Fukamachi, T. Shiota, T. Kitatani, K. Hosomi, Y.Matsuoka, T. Sugawara, andM. Aoki, "A 1.3-ìm lens-integrated horizontal-cavity surface-emitting laser with direct and highly efficient coupling to optical fiber," presented at the Opt. Fiber Commun. Conf./Nat. Fiber Opt. Eng. Conf., San Diego, CA, Mar. 2009, Paper JThA31.
28. K. Kato, S. Hata, K. Kawano, and A. Kozen, "Design of ultrawide-band, high-sensitivity p-i-n photodetector," IEICE Trans. Electron., vol. E76-C, pp. 214-221, 1993.
29. M. Achouche, V. Magnin, J. Harari, D. Carpentier, E. Derouin, C. Jany, and D. Decoster, "Design and fabrication of a p-i-n photodiode with high responsivity and large alignment tolerances for 40-Gb/s applications," IEEE Photon. Technol. Lett., vol. 18, no. 4, pp. 556-558, Feb. 2006. (Pubitemid 43193066)
30. J. J. I-Hsing Tan Dudley, D. I. Babic, D. A. Cohen, B. D. Young, E. L. Hu, J. E. Bowers, B. I. Miller, U. Koren, and M. G. Youn, "High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47 As photodetectors," IEEE Photon. Technol. Lett., vol. 6, no. 7, pp. 811-813, Jul. 1994.