Growth and characterization of (K0.5 Na0.5)NbO 3 thin films by a sol-gel method

Journal of Sol-Gel Science and Technology

Volumn 58, Issue 1, 2011, Pages 85-90

  Kang, Chiwon ^a   Park, Jung Hyun ^a   Shen, Dongna ^a   Ahn, Hosang ^a   Park, Minseo ^b   Kim, Dong Joo ^a  

^a AUBURN UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

Author keywords

(K0.5 Na0.5)NbO3; Crystallization; Piezoelectric material; Thin film

Indexed keywords

(K0.5 NA0.5)NBO3; ANNEALING METHODS; ANNEALING PROCESS; ANNEALING TEMPERATURES; CRYSTALLINE PEAKS; CRYSTALLIZATION BEHAVIOR; ENVIRONMENTALLY BENIGN; FERROELECTRIC HYSTERESIS LOOP; FERROELECTRIC PROPERTY; ION EXCESS; LAYER-BY-LAYERS; LEAD-FREE PIEZOELECTRIC MATERIALS; PRECURSOR SOLUTIONS; PT(111); RANDOM ORIENTATIONS; SI (100) SUBSTRATE; SITE VACANCIES; SOL-GEL METHODS;

ANNEALING; CRYSTALLIZATION; FERROELECTRICITY; GELS; HYSTERESIS; HYSTERESIS LOOPS; MEMS; NIOBIUM OXIDE; PEROVSKITE; PIEZOELECTRIC DEVICES; PIEZOELECTRIC MATERIALS; PIEZOELECTRICITY; PLATINUM; SILICON COMPOUNDS; SINGLE CRYSTALS; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS;

FERROELECTRIC FILMS;

EID: 79954590401     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-010-2359-6     Document Type: Article

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